@article{Semtsiv2005Neari-4951,
  year={2005},
  doi={10.1002/pssc.200303942},
  title={Near-infrared intersubband transitions in InGaAs AlAs InAlAs double quantum wells},
  volume={97},
  journal={Journal of Applied Physics},
  author={Semtsiv, Mykhaylo P. and Ziegler, Mathias and Masselink, William Ted and Georgiev, Nikolai and Dekorsy, Thomas and Helm, Manfred},
  note={Article Number: 113538}
}

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    <dcterms:title>Near-infrared intersubband transitions in InGaAs AlAs InAlAs double quantum wells</dcterms:title>
    <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics 97 (2005), 113538</dcterms:bibliographicCitation>
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    <dc:contributor>Dekorsy, Thomas</dc:contributor>
    <dc:contributor>Georgiev, Nikolai</dc:contributor>
    <dc:language>eng</dc:language>
    <dc:contributor>Helm, Manfred</dc:contributor>
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    <dc:creator>Masselink, William Ted</dc:creator>
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    <dc:creator>Ziegler, Mathias</dc:creator>
    <dcterms:issued>2005</dcterms:issued>
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    <dc:contributor>Masselink, William Ted</dc:contributor>
    <dc:creator>Georgiev, Nikolai</dc:creator>
    <dcterms:abstract xml:lang="deu">Intersubband optical transitions at short wavelengths in strain-compensated In0.70Ga0.30As AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55  µm, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2 4 µm. Significant oscillator strength, however, also extends out to 800 meV, 1.55 µm.</dcterms:abstract>
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    <dc:contributor>Ziegler, Mathias</dc:contributor>
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