Laser-annealing of thin semiconductor films

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1994
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Second International Symposium on Advanced Laser Technologies / Pustovoy, Vladimir I.; Jelinek, Miroslav (ed.). - SPIE, 1994. - (SPIE Proceedings ; 2332). - pp. 2-15
Abstract
Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.
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530 Physics
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Advanced Laser Technologies: International Symposium, Prague, Czech Republic
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Cite This
ISO 690BONEBERG, Johannes, Johann NEDELCU, Ernst BUCHER, Paul LEIDERER, 1994. Laser-annealing of thin semiconductor films. Advanced Laser Technologies: International Symposium. Prague, Czech Republic. In: PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. SPIE, pp. 2-15. Available under: doi: 10.1117/12.195876
BibTex
@inproceedings{Boneberg1994-12-12Laser-4948,
  year={1994},
  doi={10.1117/12.195876},
  title={Laser-annealing of thin semiconductor films},
  number={2332},
  publisher={SPIE},
  series={SPIE Proceedings},
  booktitle={Second International Symposium on Advanced Laser Technologies},
  pages={2--15},
  editor={Pustovoy, Vladimir I. and Jelinek, Miroslav},
  author={Boneberg, Johannes and Nedelcu, Johann and Bucher, Ernst and Leiderer, Paul}
}
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