Laser-annealing of thin semiconductor films
| Publikationstyp: | Beitrag zu einer Konferenz |
| URI (zitierfähiger Link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-30586 |
| Autor/innen: | Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul |
| Erscheinungsjahr: | 1994 |
| Konferenz: | Advanced Laser Technologies: International Symposium, Prague, Czech Republic |
| Erschienen in: | Second International Symposium on Advanced Laser Technologies / Pustovoy, Vladimir I.; Jelinek, Miroslav (Hrsg.). - SPIE, 1994. - (SPIE Proceedings ; 2332). - S. 2-15 |
| DOI (zitierfähiger Link): | https://dx.doi.org/10.1117/12.195876 |
| Zusammenfassung: |
Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.
|
| Fachgebiet (DDC): | 530 Physik |
| Link zur Lizenz: | Nutzungsbedingungen |
Zitieren
Dateien zu dieser Ressource
![[PDF]](/themes/Kops/images/mimes/pdf.png "PDF file"){kind=small}
BONEBERG, Johannes, Johann NEDELCU, Ernst BUCHER, Paul LEIDERER, 1994. Laser-annealing of thin semiconductor films. Advanced Laser Technologies: International Symposium. Prague, Czech Republic. In: PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. Advanced Laser Technologies: International Symposium. Prague, Czech Republic. SPIE, pp. 2-15. Available under: doi: 10.1117/12.195876
@inproceedings{Boneberg1994-12-12Laser-4948, title={Laser-annealing of thin semiconductor films}, year={1994}, doi={10.1117/12.195876}, number={2332}, publisher={SPIE}, series={SPIE Proceedings}, booktitle={Second International Symposium on Advanced Laser Technologies}, pages={2--15}, editor={Pustovoy, Vladimir I. and Jelinek, Miroslav}, author={Boneberg, Johannes and Nedelcu, Johann and Bucher, Ernst and Leiderer, Paul} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/4948"> <dc:rights>terms-of-use</dc:rights> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4948"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Leiderer, Paul</dc:creator> <dc:contributor>Boneberg, Johannes</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:51:36Z</dcterms:available> <dc:creator>Nedelcu, Johann</dc:creator> <dc:format>application/pdf</dc:format> <dc:creator>Bucher, Ernst</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:51:36Z</dc:date> <dc:contributor>Bucher, Ernst</dc:contributor> <dcterms:abstract xml:lang="eng">Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.</dcterms:abstract> <dc:contributor>Nedelcu, Johann</dc:contributor> <dcterms:bibliographicCitation>First publ. in: Second International Symposium on Advanced Laser Technologies, Proceedings of SPIE 2332 (1993), pp. 1-14</dcterms:bibliographicCitation> <dcterms:issued>1994-12-12</dcterms:issued> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4948/1/145_procspie_1993.pdf"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/4948/1/145_procspie_1993.pdf"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:language>eng</dc:language> <dcterms:title>Laser-annealing of thin semiconductor films</dcterms:title> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dc:creator>Boneberg, Johannes</dc:creator> <dc:contributor>Leiderer, Paul</dc:contributor> </rdf:Description> </rdf:RDF>
Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)
| 145_procspie_1993.pdf | 78 |
Das Dokument erscheint in:
Solange nicht anders angezeigt, wird die Lizenz wie folgt beschrieben: terms-of-use
KOPS Suche
Stöbern
Mein Benutzerkonto
