Laser-annealing of thin semiconductor films
| Publikationstyp: | Beitrag zu einer Konferenz |
| URI (zitierfähiger Link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-30586 |
| Autor/innen: | Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul |
| Erscheinungsjahr: | 1994 |
| Konferenz: | Advanced Laser Technologies: International Symposium, Prague, Czech Republic |
| Erschienen in: | Second International Symposium on Advanced Laser Technologies / Pustovoy, Vladimir I.; Jelinek, Miroslav (Hrsg.). - SPIE, 1994. - (SPIE Proceedings ; 2332). - S. 2-15 |
| DOI (zitierfähiger Link): | https://dx.doi.org/10.1117/12.195876 |
| Zusammenfassung: |
Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.
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| Fachgebiet (DDC): | 530 Physik |
| Link zur Lizenz: | Nutzungsbedingungen |
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BONEBERG, Johannes, Johann NEDELCU, Ernst BUCHER, Paul LEIDERER, 1994. Laser-annealing of thin semiconductor films. Advanced Laser Technologies: International Symposium. Prague, Czech Republic. In: PUSTOVOY, Vladimir I., ed., Miroslav JELINEK, ed.. Second International Symposium on Advanced Laser Technologies. SPIE, pp. 2-15. Available under: doi: 10.1117/12.195876
@inproceedings{Boneberg1994-12-12Laser-4948, title={Laser-annealing of thin semiconductor films}, year={1994}, doi={10.1117/12.195876}, number={2332}, publisher={SPIE}, series={SPIE Proceedings}, booktitle={Second International Symposium on Advanced Laser Technologies}, pages={2--15}, editor={Pustovoy, Vladimir I. and Jelinek, Miroslav}, author={Boneberg, Johannes and Nedelcu, Johann and Bucher, Ernst and Leiderer, Paul} }
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