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Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging

Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging

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WAGNER, Hannes, Silke STEINGRUBE, Bettina WOLPENSINGER, Amir DASTGHEIB-SHIRAZI, Renyu CHEN, Scott T. DUNHAM, Pietro P. ALTERMATT, 2012. Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging. 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). Austin, TX, USA, Jun 3, 2012 - Jun 8, 2012. In: 2012 38th IEEE Photovoltaic Specialists Conference. Piscataway, NJ:IEEE, pp. 000313-000316. ISBN 978-1-4673-0064-3. Available under: doi: 10.1109/PVSC.2012.6317625

@inproceedings{Wagner2012Analy-49365, title={Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging}, year={2012}, doi={10.1109/PVSC.2012.6317625}, isbn={978-1-4673-0064-3}, address={Piscataway, NJ}, publisher={IEEE}, booktitle={2012 38th IEEE Photovoltaic Specialists Conference}, pages={000313--000316}, author={Wagner, Hannes and Steingrube, Silke and Wolpensinger, Bettina and Dastgheib-Shirazi, Amir and Chen, Renyu and Dunham, Scott T. and Altermatt, Pietro P.} }

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