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Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs

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SEGSCHNEIDER, Gregor, Thomas DEKORSY, Heinrich KURZ, Rudolf HEY, Klaus PLOOG, 1997. Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs. In: Applied Physics Letters. 71(19), pp. 2779-2781

@article{Segschneider1997Energ-4820, title={Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs}, year={1997}, doi={10.1063/1.120131}, number={19}, volume={71}, journal={Applied Physics Letters}, pages={2779--2781}, author={Segschneider, Gregor and Dekorsy, Thomas and Kurz, Heinrich and Hey, Rudolf and Ploog, Klaus} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/4820"> <dcterms:title>Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs</dcterms:title> <dc:creator>Hey, Rudolf</dc:creator> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dc:creator>Dekorsy, Thomas</dc:creator> <dc:format>application/pdf</dc:format> <dc:rights>deposit-license</dc:rights> <dc:creator>Ploog, Klaus</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:35Z</dc:date> <dc:contributor>Kurz, Heinrich</dc:contributor> <dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 71 (1997), 19, pp. 2779-2781</dcterms:bibliographicCitation> <dcterms:abstract xml:lang="eng">We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.</dcterms:abstract> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4820"/> <dc:contributor>Ploog, Klaus</dc:contributor> <dcterms:issued>1997</dcterms:issued> <dc:creator>Kurz, Heinrich</dc:creator> <dc:creator>Segschneider, Gregor</dc:creator> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:contributor>Segschneider, Gregor</dc:contributor> <dc:language>eng</dc:language> <dc:contributor>Hey, Rudolf</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:35Z</dcterms:available> </rdf:Description> </rdf:RDF>

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