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Type of Publication: | Journal article |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-44804 |
Author: | Segschneider, Gregor; Dekorsy, Thomas; Kurz, Heinrich; Hey, Rudolf; Ploog, Klaus |
Year of publication: | 1997 |
Published in: | Applied Physics Letters ; 71 (1997), 19. - pp. 2779-2781 |
DOI (citable link): | https://dx.doi.org/10.1063/1.120131 |
Summary: |
We investigate the relaxation dynamics of photogenerated carriers in low-temperature grown GaAs by femtosecond pump-probe measurements. The carrier dynamics in the vicinity of the band edge is disentangled in a two-color technique. The filling of shallow bound states close beneath the band edge is resolved. A temporal delay in the occupation of these states as well as a large optical nonlinearity points towards microscopic potential fluctuations forming these states.
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Subject (DDC): | 530 Physics |
Link to License: | Attribution-NonCommercial-NoDerivs 2.0 Generic |
SEGSCHNEIDER, Gregor, Thomas DEKORSY, Heinrich KURZ, Rudolf HEY, Klaus PLOOG, 1997. Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs. In: Applied Physics Letters. 71(19), pp. 2779-2781. Available under: doi: 10.1063/1.120131
@article{Segschneider1997Energ-4820, title={Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs}, year={1997}, doi={10.1063/1.120131}, number={19}, volume={71}, journal={Applied Physics Letters}, pages={2779--2781}, author={Segschneider, Gregor and Dekorsy, Thomas and Kurz, Heinrich and Hey, Rudolf and Ploog, Klaus} }
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Energy_resolved_ultrafast_relaxation_dynamics_close_to_the_band_edge_of_low_temperature_grown_GaAs.pdf | 504 |