Efficient silicon based light emitters

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HELM, Manfred, Jiaming SUN, Jaroslava POTFAJOVA, Thomas DEKORSY, Bernd SCHMIDT, Wolfgang SKORUPA, 2005. Efficient silicon based light emitters. In: Microelectronics Journal. 36, pp. 957-962

@article{Helm2005Effic-4755, title={Efficient silicon based light emitters}, year={2005}, doi={10.1016/j.mejo.2005.04.002}, volume={36}, journal={Microelectronics Journal}, pages={957--962}, author={Helm, Manfred and Sun, Jiaming and Potfajova, Jaroslava and Dekorsy, Thomas and Schmidt, Bernd and Skorupa, Wolfgang} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/4755"> <dcterms:issued>2005</dcterms:issued> <dc:rights>deposit-license</dc:rights> <dcterms:bibliographicCitation>First publ. in: Microelectronics Journal 36 (2005), pp. 957-962</dcterms:bibliographicCitation> <dc:creator>Dekorsy, Thomas</dc:creator> <dc:language>eng</dc:language> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:06Z</dcterms:available> <dc:contributor>Schmidt, Bernd</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T14:50:06Z</dc:date> <dc:creator>Sun, Jiaming</dc:creator> <dc:contributor>Potfajova, Jaroslava</dc:contributor> <dc:creator>Potfajova, Jaroslava</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/4755"/> <dc:contributor>Helm, Manfred</dc:contributor> <dcterms:abstract xml:lang="eng">Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs were fabricated by high-dose boron implantation, producing nanoscale modifications in the material. The electroluminescence (EL) efficiency increases with temperature, reaching 0.1% (wall plug efficiency) at room temperature for optimized conditions. Such devices were integrated into a microcavity. In the MOS devices, the oxide was implanted with various rare-earth elements, resulting in strong EL in the visible (Tb) and ultraviolet (Gd). External quantum efficiencies in excess of 10% are reported.</dcterms:abstract> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:contributor>Skorupa, Wolfgang</dc:contributor> <dcterms:title>Efficient silicon based light emitters</dcterms:title> <dc:contributor>Sun, Jiaming</dc:contributor> <dc:creator>Skorupa, Wolfgang</dc:creator> <dc:creator>Schmidt, Bernd</dc:creator> <dc:creator>Helm, Manfred</dc:creator> <dc:format>application/pdf</dc:format> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> </rdf:Description> </rdf:RDF>

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