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Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells

Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells

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ENGELHARDT, Josh, Hermann KROMER, Giso HAHN, Barbara TERHEIDEN, 2019. Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York:AIP Publishing, 070002. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123863

@inproceedings{Engelhardt2019Laser-46823, title={Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells}, year={2019}, doi={10.1063/1.5123863}, number={2147,1}, isbn={978-0-7354-1892-9}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium}, editor={Poortmans, Jef}, author={Engelhardt, Josh and Kromer, Hermann and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 070002} }

Hahn, Giso terms-of-use Terheiden, Barbara Engelhardt, Josh Laser doping from as-deposited CVD layers for high-efficiency crystalline silicon solar cells Terheiden, Barbara Engelhardt, Josh 2019-09-11T12:39:56Z Kromer, Hermann eng Laser doping from as-deposited CVD layers is a new and promising field for selective doping in solar cell processing. It allows for freely structured and adaptive doping with high-throughput. Challenging is the optimization of a variety of process parameters. In this work, we demonstrate the impact of laser parameters, such as fluence and sweep repetition, as well as thermal treatment i.e., tube diffusion, on passivation quality. Specifically, laser doping process dependence on the resulting doping profile and on iV<sub>OC</sub> level is investigated. Laser processing of solar cell precursors with a selective emitter and local BSF is shown to reach an iV<sub>OC</sub> of ∼700 mV allowing for a high-efficiency level of >22.5% in industrial processing. The process flow in this case is suitable for a low-cost approach with reduced number of process steps. 2019 Hahn, Giso Kromer, Hermann 2019-09-11T12:39:56Z

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