A generalized model for boron-oxygen related light-induced degradation in crystalline silicon
| Type of Publication: | Contribution to a conference collection |
| Publication status: | Published |
| Author: | Herguth, Axel; Hallam, Brett |
| Year of publication: | 2018 |
| Conference: | SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics, Mar 19, 2018 - Mar 21, 2018, Lausanne |
| Published in: | SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics / Ballif, Christophe et al. (ed.). - Melville, NY : AIP Publishing, 2018. - (AIP Conference Proceedings ; 1999,1). - 130006. - ISSN 0094-243X. - eISSN 0094-243X. - ISBN 978-0-7354-1715-1 |
| DOI (citable link): | https://dx.doi.org/10.1063/1.5049325 |
| Summary: |
The current state-of-knowledge regarding the reaction dynamics behind Boron-Oxygen related Light-Induced Degradation (BO-LID) is reviewed and an updated Generalized Model of BO-LID is presented. The paper includes the key role of carrier injection in causing the degradation mechanism, the multiple precursor states that result in a multi-stage degradation of carrier lifetime, thermal killing of defect precursors, and hydrogen passivation or ‘regeneration’ of the defects in the presence of hydrogen and carrier injection. In particular, the paper discusses the importance of hydrogen sources, the role of hydrogen-traps such as substitutional boron, and hydrogen charge states for changing the dynamics of the system.
|
| Subject (DDC): | 530 Physics |
| Bibliography of Konstanz: | Yes |
Cite This
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
|
There are no files associated with this item. |
|||
HERGUTH, Axel, Brett HALLAM, 2018. A generalized model for boron-oxygen related light-induced degradation in crystalline silicon. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, Mar 19, 2018 - Mar 21, 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY:AIP Publishing, 130006. ISSN 0094-243X. eISSN 0094-243X. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049325
@inproceedings{Herguth2018gener-46513, title={A generalized model for boron-oxygen related light-induced degradation in crystalline silicon}, year={2018}, doi={10.1063/1.5049325}, number={1999,1}, isbn={978-0-7354-1715-1}, issn={0094-243X}, address={Melville, NY}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics}, editor={Ballif, Christophe}, author={Herguth, Axel and Hallam, Brett}, note={Article Number: 130006} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/46513"> <dcterms:title>A generalized model for boron-oxygen related light-induced degradation in crystalline silicon</dcterms:title> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-24T11:57:18Z</dc:date> <dcterms:issued>2018</dcterms:issued> <dc:contributor>Herguth, Axel</dc:contributor> <dc:language>eng</dc:language> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Hallam, Brett</dc:creator> <dc:creator>Herguth, Axel</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:abstract xml:lang="eng">The current state-of-knowledge regarding the reaction dynamics behind Boron-Oxygen related Light-Induced Degradation (BO-LID) is reviewed and an updated Generalized Model of BO-LID is presented. The paper includes the key role of carrier injection in causing the degradation mechanism, the multiple precursor states that result in a multi-stage degradation of carrier lifetime, thermal killing of defect precursors, and hydrogen passivation or ‘regeneration’ of the defects in the presence of hydrogen and carrier injection. In particular, the paper discusses the importance of hydrogen sources, the role of hydrogen-traps such as substitutional boron, and hydrogen charge states for changing the dynamics of the system.</dcterms:abstract> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-24T11:57:18Z</dcterms:available> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/46513"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Hallam, Brett</dc:contributor> </rdf:Description> </rdf:RDF>
This item appears in the following Collection(s)
Search KOPS
Browse
My Account
