KOPS - The Institutional Repository of the University of Konstanz

Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon

Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon

Cite This

Files in this item

Files Size Format View

There are no files associated with this item.

KELLER, Philipp, Axel HERGUTH, 2018. Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, Mar 19, 2018 - Mar 21, 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY:AIP Publishing, 130009. ISSN 0094-243X. eISSN 0094-243X. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049328

@inproceedings{Keller2018Inves-46512, title={Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon}, year={2018}, doi={10.1063/1.5049328}, number={1999,1}, isbn={978-0-7354-1715-1}, issn={0094-243X}, address={Melville, NY}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics}, editor={Ballif, Christophe}, author={Keller, Philipp and Herguth, Axel}, note={Article Number: 130009} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/46512"> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-24T11:43:44Z</dc:date> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/46512"/> <dcterms:issued>2018</dcterms:issued> <dc:creator>Keller, Philipp</dc:creator> <dcterms:title>Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon</dcterms:title> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Herguth, Axel</dc:creator> <dcterms:abstract xml:lang="eng">Hydrogen in-diffusion into highly boron-doped crystalline silicon from a remote hydrogen plasma with and without illumination (excess carrier injection) is investigated in the temperature range 60-200°C by means of ECV relying on the deactivation of acceptors by formation of acceptor-hydrogen pairs. Diffusivity is analyzed via the Boltzmann-Matano approach. Effective diffusivity of hydrogen under the investigated conditions is found to be strongly trap-limited. Furthermore, it is found that illumination has a decelerating influence on the effective diffusivity of hydrogen probably due to the enhancement or suppression of diffusion of differently charged hydrogen species by the electric field of the high-low junction formed by the passivation of boron in the diffused region.</dcterms:abstract> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-07-24T11:43:44Z</dcterms:available> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Herguth, Axel</dc:contributor> <dc:contributor>Keller, Philipp</dc:contributor> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>

This item appears in the following Collection(s)

Search KOPS


Browse

My Account