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Influence of temperature on light induced phenomena in multicrystalline silicon

Influence of temperature on light induced phenomena in multicrystalline silicon

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HERGUTH, Axel, Philipp KELLER, Noemi MUNDHAAS, 2018. Influence of temperature on light induced phenomena in multicrystalline silicon. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, Mar 19, 2018 - Mar 21, 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY:AIP Publishing, 130007. ISSN 0094-243X. eISSN 0094-243X. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049326

@inproceedings{Herguth2018Influ-46511, title={Influence of temperature on light induced phenomena in multicrystalline silicon}, year={2018}, doi={10.1063/1.5049326}, number={1999, 1}, isbn={978-0-7354-1715-1}, issn={0094-243X}, address={Melville, NY}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics}, editor={Ballif, Christophe}, author={Herguth, Axel and Keller, Philipp and Mundhaas, Noemi}, note={Article Number: 130007} }

2019-07-24T11:40:47Z eng 2018 Mundhaas, Noemi Herguth, Axel 2019-07-24T11:40:47Z Herguth, Axel The changes in effective lifetime for mc-Si under the influence of elevated temperatures ranging from 160°C to 400°C and illumination of 2 suns were investigated. It is shown that Light and elevated Temperature Induced Degradation (LeTID) and its subsequent curing can be observed up to a temperature of ~280°C, but vanishes above. Furthermore, it is shown that lifetimes exceed the initial value during prolonged illumination which is interpreted as advanced hydrogenation. However, even though lifetimes exceed the initial value due to advanced hydrogenation at temperatures >280°C, these lifetimes prove to be at least partially instable at low temperatures under illumination suggesting LeTID is not or at least not completely cured. It is concluded that LeTID and advanced hydrogenation are related to different defect systems. In addition, it is shown that both LeTID and advanced hydrogenation only occur above a peak set firing temperature of 720°C thus indicating that lower peak firing temperatures can successfully suppress LeTID, however, only at the price of losing the benefit from advanced hydrogenation as well. Furthermore, it is shown that increasing illumination intensity speeds up the dynamics of LeTID and advanced hydrogenation, respectively. Keller, Philipp Influence of temperature on light induced phenomena in multicrystalline silicon Keller, Philipp Mundhaas, Noemi

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