Light-emitting silicon pn diodes

Cite This

Files in this item

Checksum: MD5:55237e9ecfe5745dae06c2819185fc28

DEKORSY, Thomas, Jiaming SUN, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2004. Light-emitting silicon pn diodes. In: Applied Physics A. 78, pp. 471-475. Available under: doi: 10.1007/s00339-003-2406-z

@article{Dekorsy2004Light-4648, title={Light-emitting silicon pn diodes}, year={2004}, doi={10.1007/s00339-003-2406-z}, volume={78}, journal={Applied Physics A}, pages={471--475}, author={Dekorsy, Thomas and Sun, Jiaming and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:rights rdf:resource=""/> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dc:contributor>Schmidt, Bernd</dc:contributor> <dcterms:issued>2004</dcterms:issued> <dc:creator>Helm, Manfred</dc:creator> <dc:contributor>Helm, Manfred</dc:contributor> <dcterms:available rdf:datatype="">2011-03-24T14:49:15Z</dcterms:available> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:language>eng</dc:language> <dc:creator>Schmidt, Bernd</dc:creator> <bibo:uri rdf:resource=""/> <dc:creator>Sun, Jiaming</dc:creator> <dcterms:isPartOf rdf:resource=""/> <dcterms:hasPart rdf:resource=""/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dspace:hasBitstream rdf:resource=""/> <dc:contributor>Skorupa, Wolfgang</dc:contributor> <dc:creator>Dekorsy, Thomas</dc:creator> <dcterms:title>Light-emitting silicon pn diodes</dcterms:title> <dcterms:bibliographicCitation>First publ. in: Applied Physics A 78 (2004), pp. 471-475</dcterms:bibliographicCitation> <dc:creator>Skorupa, Wolfgang</dc:creator> <dcterms:abstract xml:lang="eng">We report on the electrical and optical characteristics of silicon light-emitting pn diodes. The diodes are prepared by ion implantation of boron at high doses and subsequent hightemperature annealing. Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si. We present a rate-equation model for bound excitons, free excitons and free carriers which successfully describes the electrical and optical behaviour of the diodes at low temperatures. Especially, an electrical bistability observed below 50 K is shown to be based on the interplay of bound excitons, free excitons and free carriers in the active area of the diodes. The ionisation of bound excitons is the origin of an improved electroluminescence from the diodes at higher lattice temperatures.</dcterms:abstract> <dspace:isPartOfCollection rdf:resource=""/> <dc:contributor>Sun, Jiaming</dc:contributor> <dc:date rdf:datatype="">2011-03-24T14:49:15Z</dc:date> <dc:format>application/pdf</dc:format> </rdf:Description> </rdf:RDF>

Downloads since Oct 1, 2014 (Information about access statistics)

Light_emitting_silicon_pn_diodes.pdf 482

This item appears in the following Collection(s)

Attribution-NonCommercial-NoDerivs 2.0 Generic Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 2.0 Generic

Search KOPS


My Account