Ultrafast carrier recombination in highly n-doped Ge-on-Si films

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ALLERBECK, Jonas, Andreas J. HERBST, Yuji YAMAMOTO, Giovanni CAPELLINI, Michele VIRGILIO, Daniele BRIDA, 2019. Ultrafast carrier recombination in highly n-doped Ge-on-Si films. In: Applied Physics Letters. 114(24), 241104. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5088012

@article{Allerbeck2019-06-17Ultra-46314, title={Ultrafast carrier recombination in highly n-doped Ge-on-Si films}, year={2019}, doi={10.1063/1.5088012}, number={24}, volume={114}, issn={0003-6951}, journal={Applied Physics Letters}, author={Allerbeck, Jonas and Herbst, Andreas J. and Yamamoto, Yuji and Capellini, Giovanni and Virgilio, Michele and Brida, Daniele}, note={Article Number: 241104} }

Capellini, Giovanni 2019-06-17 Herbst, Andreas J. 2019-07-10T13:17:13Z eng Yamamoto, Yuji Herbst, Andreas J. Virgilio, Michele We study the femtosecond carrier dynamics of n-type doped and biaxially strained Ge-on-Si films which occurs upon impulsive photoexcitation by means of broadband near-IR transient absorption spectroscopy. The modeling of the experimental data takes into account the static donor density in a modified rate equation for the description of the temporal recombination dynamics. The measurements confirm the negligible contribution at a high n-type doping concentration, in the 10<sup>19</sup> cm<sup>-3</sup> range, of Auger processes as compared to defect-related Shockley-Read-Hall recombination. Energy resolved dynamics reveal further insights into the doping-related band structure changes and suggest a reshaping of direct and indirect conduction band valleys to a single effective valley along with a significant spectral broadening of the optical transitions. Ultrafast carrier recombination in highly n-doped Ge-on-Si films Virgilio, Michele Capellini, Giovanni 2019-07-10T13:17:13Z Brida, Daniele Allerbeck, Jonas Yamamoto, Yuji Allerbeck, Jonas Brida, Daniele

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