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Gettering and passiviation of advanced high performance multicrystalline silicon material

Gettering and passiviation of advanced high performance multicrystalline silicon material

Type of Publication: Contribution to a conference
Publication status: Published
URI (citable link): http://nbn-resolving.de/urn:nbn:de:bsz:352-2-10jg69nplcc5h1
Author: Fischer, Christian; Lindroos, Jeanette; Zuschlag, Annika; Hahn, Giso
Year of publication: 2018
Conference: 35th European Photovoltaic Solar Energy Conference and Exhibition, Sep 24, 2018 - Sep 28, 2018, Brussels
Published in: 35th European Photovoltaic Solar Energy Conference and Exhibition / Verlinden, Pierre et al. (ed.). - München : WIP, 2018. - pp. 531-534. - ISBN 978-3-936338-50-8
DOI (citable link): https://dx.doi.org/10.4229/35thEUPVSEC20182018-2AV.1.31
Summary:
High performance multicrystalline (HP mc) silicon material with local effective minority charge carrier lifetime above 1 ms is a promising pathway to increase efficiency in mc silicon solar cells. Critical for the success of the material is the behavior of the material quality during solar cell processing. Phosphorus gettering during emitter formation for example is known to reduce contaminations and thus to enhance carrier lifetime in multicrystalline material. In contrast, also an increase of charge carrier recombination was recently reported for P-gettering in HP mcSi. Therefore, a detailed analysis of different P-gettering profiles and te mperature effects combined with several surface passivations (SiNx:H, AlOx and iodine-ethanol) is performed to gain further understanding of this phenomenon. Especially changes in eff due to different thermal load and in-diffusing hydrogen from SiNx:H are investigated.
Subject (DDC): 530 Physics
Keywords: Gettering, Lifetime, Passivation, High Performance, Multicrystalline Silicon
Link to License: In Copyright
Bibliography of Konstanz: Yes

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FISCHER, Christian, Jeanette LINDROOS, Annika ZUSCHLAG, Giso HAHN, 2018. Gettering and passiviation of advanced high performance multicrystalline silicon material. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, Sep 24, 2018 - Sep 28, 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München:WIP, pp. 531-534. ISBN 978-3-936338-50-8. Available under: doi: 10.4229/35thEUPVSEC20182018-2AV.1.31

@inproceedings{Fischer2018Gette-45199, title={Gettering and passiviation of advanced high performance multicrystalline silicon material}, year={2018}, doi={10.4229/35thEUPVSEC20182018-2AV.1.31}, isbn={978-3-936338-50-8}, address={München}, publisher={WIP}, booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition}, pages={531--534}, editor={Verlinden, Pierre}, author={Fischer, Christian and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso} }

Hahn, Giso Lindroos, Jeanette Fischer, Christian 2018 Lindroos, Jeanette eng terms-of-use Hahn, Giso 2019-02-25T12:26:08Z 2019-02-25T12:26:08Z Zuschlag, Annika Fischer, Christian Zuschlag, Annika Gettering and passiviation of advanced high performance multicrystalline silicon material High performance multicrystalline (HP mc) silicon material with local effective minority charge carrier lifetime above 1 ms is a promising pathway to increase efficiency in mc silicon solar cells. Critical for the success of the material is the behavior of the material quality during solar cell processing. Phosphorus gettering during emitter formation for example is known to reduce contaminations and thus to enhance carrier lifetime in multicrystalline material. In contrast, also an increase of charge carrier recombination was recently reported for P-gettering in HP mcSi. Therefore, a detailed analysis of different P-gettering profiles and te mperature effects combined with several surface passivations (SiN<sub>x</sub>:H, AlO<sub>x</sub> and iodine-ethanol) is performed to gain further understanding of this phenomenon. Especially changes in eff due to different thermal load and in-diffusing hydrogen from SiN<sub>x</sub>:H are investigated.

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