Stress control of tensile-strained In1−xGaxP nanomechanical string resonators
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We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In1−xGaxP. The intrinsic strain arises during epitaxial growth as a consequence of the lattice mismatch between the thin film and the substrate, and is confirmed by x-ray diffraction measurements. The flexural eigenfrequencies of the nanomechanical string resonators reveal an orientation dependent stress with a maximum value of 650 MPa. The angular dependence is explained by a combination of anisotropic Young's modulus and a change of elastic properties caused by defects. As a function of the crystal orientation, a stress variation of up to 50% is observed. This enables fine tuning of the tensile stress for any given Ga content x, which implies interesting prospects for the study of high Q nanomechanical systems.
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BÜCKLE, Maximilian, Valentin C. HAUBER, Garrett D. COLE, Claus GÄRTNER, Ute ZEIMER, Jörg GRENZER, Eva M. WEIG, 2018. Stress control of tensile-strained In1−xGaxP nanomechanical string resonators. In: Applied Physics Letters. 2018, 113(20), 201903. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.5054076BibTex
@article{Buckle2018Stres-45131, year={2018}, doi={10.1063/1.5054076}, title={Stress control of tensile-strained In<sub>1−x</sub>Ga<sub>x</sub>P nanomechanical string resonators}, number={20}, volume={113}, issn={0003-6951}, journal={Applied Physics Letters}, author={Bückle, Maximilian and Hauber, Valentin C. and Cole, Garrett D. and Gärtner, Claus and Zeimer, Ute and Grenzer, Jörg and Weig, Eva M.}, note={Article Number: 201903} }
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