Record efficiency of 16.7% in EFG ribbon silicium

Cite This

Files in this item

Checksum: MD5:39e386eefe12ff3ef68639927d88382a

GEIGER, Patric, Giso HAHN, Peter FATH, 2003. Record efficiency of 16.7% in EFG ribbon silicium. 3rd World Conference on Photovoltaic Energy Conversion : 3rd WC PVSEC. Osaka, Japan, May 11, 2003 - May 18, 2003. In: KUROKAWA, Kosuke, ed. and others. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C. Piscataway, NJ:IEEE, pp. 1392-1394. ISBN 4-9901816-2-X

@inproceedings{Geiger2003Recor-42205, title={Record efficiency of 16.7% in EFG ribbon silicium}, url={}, year={2003}, isbn={4-9901816-2-X}, address={Piscataway, NJ}, publisher={IEEE}, booktitle={Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C}, pages={1392--1394}, editor={Kurokawa, Kosuke}, author={Geiger, Patric and Hahn, Giso and Fath, Peter} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dc:creator>Geiger, Patric</dc:creator> <dspace:hasBitstream rdf:resource=""/> <dc:rights>terms-of-use</dc:rights> <dcterms:abstract xml:lang="eng">Recently obtained results of a process monitoring based on spatially resolved lifetime measurements revealed that bulk lifetime values above 300 /spl mu/s can be reached within edge-defined film-fed growth (EFG) silicon ribbons with the help of gettering and hydrogen passivation steps. Therefore, recombination losses at the wafer backside have to be considered in this material with low as grown lifetimes. The solar cell processing sequence has been adapted to the needs of this material. Besides phosphorous gettering and remote hydrogen plasma passivation a screen printed back surface field has been implemented instead of an evaporated and subsequently alloyed thin Al BSF used for Al gettering. This allows to make use of low energy photons in regions with very high bulk lifetimes. In this way an independently confirmed solar cell efficiency of 16.7% has been obtained which is the highest value that has been reported so far.</dcterms:abstract> <dcterms:isPartOf rdf:resource=""/> <dcterms:available rdf:datatype="">2018-04-30T13:30:04Z</dcterms:available> <dcterms:rights rdf:resource=""/> <dc:date rdf:datatype="">2018-04-30T13:30:04Z</dc:date> <dc:creator>Fath, Peter</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:language>eng</dc:language> <dcterms:hasPart rdf:resource=""/> <dcterms:issued>2003</dcterms:issued> <dcterms:title>Record efficiency of 16.7% in EFG ribbon silicium</dcterms:title> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Fath, Peter</dc:contributor> <bibo:uri rdf:resource=""/> <dc:contributor>Geiger, Patric</dc:contributor> <dc:contributor>Hahn, Giso</dc:contributor> <dspace:isPartOfCollection rdf:resource=""/> </rdf:Description> </rdf:RDF>

Downloads since Apr 30, 2018 (Information about access statistics)

Geiger_2-tgziaiezbe8a8.pdf 13

This item appears in the following Collection(s)

Search KOPS


My Account