Record efficiency of 16.7% in EFG ribbon silicium

Geiger, Patric; Hahn, Giso; Fath, Peter

Record efficiency of 16.7% in EFG ribbon silicium

Dateien

Geiger_2-tgziaiezbe8a8.pdfGröße: 1.26 MBDownloads: 47

Datum

2003

Autor:innen

Geiger, Patric

Hahn, Giso

Fath, Peter

URI (zitierfähiger Link)

http://nbn-resolving.de/urn:nbn:de:bsz:352-2-tgziaiezbe8a8

Link zur Lizenz

Urheberrechtlich geschützt

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

KUROKAWA, Kosuke, ed. and others. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C. Piscataway, NJ: IEEE, 2003, pp. 1392-1394. ISBN 4-9901816-2-X

Zusammenfassung

Recently obtained results of a process monitoring based on spatially resolved lifetime measurements revealed that bulk lifetime values above 300 /spl mu/s can be reached within edge-defined film-fed growth (EFG) silicon ribbons with the help of gettering and hydrogen passivation steps. Therefore, recombination losses at the wafer backside have to be considered in this material with low as grown lifetimes. The solar cell processing sequence has been adapted to the needs of this material. Besides phosphorous gettering and remote hydrogen plasma passivation a screen printed back surface field has been implemented instead of an evaporated and subsequently alloyed thin Al BSF used for Al gettering. This allows to make use of low energy photons in regions with very high bulk lifetimes. In this way an independently confirmed solar cell efficiency of 16.7% has been obtained which is the highest value that has been reported so far.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Silicon, Gettering, Hydrogen, Passivation, Photovoltaic cells, Monitoring, Spatial resolution, Lifetime estimation, Plasma displays, Plasma materials processing

Konferenz

3rd World Conference on Photovoltaic Energy Conversion : 3rd WC PVSEC, 11. Mai 2003 - 18. Mai 2003, Osaka, Japan

Zitieren

ISO 690

GEIGER, Patric, Giso HAHN, Peter FATH, 2003. Record efficiency of 16.7% in EFG ribbon silicium. 3rd World Conference on Photovoltaic Energy Conversion : 3rd WC PVSEC. Osaka, Japan, 11. Mai 2003 - 18. Mai 2003. In: KUROKAWA, Kosuke, ed. and others. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C. Piscataway, NJ: IEEE, 2003, pp. 1392-1394. ISBN 4-9901816-2-X

BibTex

@inproceedings{Geiger2003Recor-42205,
  year={2003},
  title={Record efficiency of 16.7% in EFG ribbon silicium},
  url={https://ieeexplore.ieee.org/document/1306182/},
  isbn={4-9901816-2-X},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C},
  pages={1392--1394},
  editor={Kurokawa, Kosuke},
  author={Geiger, Patric and Hahn, Giso and Fath, Peter}
}

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URL der Originalveröffentl.

https://ieeexplore.ieee.org/document/1306182/

Prüfdatum der URL

2018-04-30

Universitätsbibliographie

Nein