This is not the latest version of this item. The latest version can be found at: https://kops.uni-konstanz.de/handle/123456789/41924.2
Type of Publication: | Working Paper/Technical Report |
Publication status: | Accepted |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-v5mhfjobyd5k9 |
Author: | Budweg, Arne; Yadav, Dinesh; Grupp, Alexander; Leitenstorfer, Alfred; Trushin, Maxim; Pauly, Fabian; Brida, Daniele |
Year of publication: | 2017 |
ArXiv-ID: | arXiv:1712.06330 |
Summary: |
We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab-initio modelling we are able to assign this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. This intrinsic modulation of the optical properties of GaSe provides attractive resources for the development of functional optoelectronic devices based on a single material.
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Subject (DDC): | 530 Physics |
Link to License: | In Copyright |
Bibliography of Konstanz: | Yes |
BUDWEG, Arne, Dinesh YADAV, Alexander GRUPP, Alfred LEITENSTORFER, Maxim TRUSHIN, Fabian PAULY, Daniele BRIDA, 2017. Control of excitonic absorption by thickness variation in few-layer GaSe
@techreport{Budweg2017-12-18T10:51:08ZContr-41924, title={Control of excitonic absorption by thickness variation in few-layer GaSe}, year={2017}, author={Budweg, Arne and Yadav, Dinesh and Grupp, Alexander and Leitenstorfer, Alfred and Trushin, Maxim and Pauly, Fabian and Brida, Daniele} }
Budweg_2-v5mhfjobyd5k9.pdf | 151 |