Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments

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2017
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7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany / Preu, Ralf (ed.). - Amsterdam : Elsevier, 2017. - (Energy Procedia ; 124). - pp. 794-798. - eISSN 1876-6102
Abstract
Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is shown, however, that boron doped float-zone samples that underwent a fast firing step may suffer from a severe degradation in bulk lifetime during illumination at elevated temperatures. Furthermore, it is observed that silicon nitride related passivation may be affected by a long-term decrease in chemical passivation quality. A time and injection resolved visualization is introduced to quickly distinguish between these degradation features. Both bulk lifetime and chemical passivation quality are shown to recover at the same treatment conditions after longer treatment times.
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530 Physics
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Charge carrier lifetime; crystalline silicon; degradation; float-zone (FZ); silicon nitride; silicon photovoltaics; stability; surface passivation
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7th International Conference on Silicon Photovoltaics, SiliconPV 2017, Apr 3, 2017 - Apr 5, 2017, Freiburg
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Cite This
ISO 690SPERBER, David, Alexander GRAF, Adrian HEILEMANN, Axel HERGUTH, Giso HAHN, 2017. Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Freiburg, Apr 3, 2017 - Apr 5, 2017. In: PREU, Ralf, ed.. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany. Amsterdam:Elsevier, pp. 794-798. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2017.09.349
BibTex
@inproceedings{Sperber2017surfa-41740,
  year={2017},
  doi={10.1016/j.egypro.2017.09.349},
  title={Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments},
  number={124},
  publisher={Elsevier},
  address={Amsterdam},
  series={Energy Procedia},
  booktitle={7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany},
  pages={794--798},
  editor={Preu, Ralf},
  author={Sperber, David and Graf, Alexander and Heilemann, Adrian and Herguth, Axel and Hahn, Giso}
}
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