Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments

Sperber, David; Graf, Alexander; Heilemann, Adrian; Herguth, Axel; Hahn, Giso

Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments

Files

Sperber_2-z1m8hyzh0bty6.pdf(1.25 MB)

Date

2017

Publication type

Contribution to a conference collection

Publication status

Published

Published in

7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany / Preu, Ralf (ed.). - Amsterdam : Elsevier, 2017. - (Energy Procedia ; 124). - pp. 794-798. - eISSN 1876-6102

Abstract

Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is shown, however, that boron doped float-zone samples that underwent a fast firing step may suffer from a severe degradation in bulk lifetime during illumination at elevated temperatures. Furthermore, it is observed that silicon nitride related passivation may be affected by a long-term decrease in chemical passivation quality. A time and injection resolved visualization is introduced to quickly distinguish between these degradation features. Both bulk lifetime and chemical passivation quality are shown to recover at the same treatment conditions after longer treatment times.

Subject (DDC)

530 Physics

Keywords

Charge carrier lifetime; crystalline silicon; degradation; float-zone (FZ); silicon nitride; silicon photovoltaics; stability; surface passivation

Conference

7th International Conference on Silicon Photovoltaics, SiliconPV 2017, Apr 3, 2017 - Apr 5, 2017, Freiburg

Cite This

ISO 690

SPERBER, David, Alexander GRAF, Adrian HEILEMANN, Axel HERGUTH, Giso HAHN, 2017. Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Freiburg, Apr 3, 2017 - Apr 5, 2017. In: PREU, Ralf, ed.. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany. Amsterdam:Elsevier, pp. 794-798. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2017.09.349

BibTex

@inproceedings{Sperber2017surfa-41740,
  year={2017},
  doi={10.1016/j.egypro.2017.09.349},
  title={Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments},
  number={124},
  publisher={Elsevier},
  address={Amsterdam},
  series={Energy Procedia},
  booktitle={7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany},
  pages={794--798},
  editor={Preu, Ralf},
  author={Sperber, David and Graf, Alexander and Heilemann, Adrian and Herguth, Axel and Hahn, Giso}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41740">
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/41740"/>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-03-09T12:19:00Z</dc:date>
    <dcterms:issued>2017</dcterms:issued>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-03-09T12:19:00Z</dcterms:available>
    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/41740/3/Sperber_2-z1m8hyzh0bty6.pdf"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Sperber, David</dc:creator>
    <dcterms:abstract xml:lang="eng">Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is shown, however, that boron doped float-zone samples that underwent a fast firing step may suffer from a severe degradation in bulk lifetime during illumination at elevated temperatures. Furthermore, it is observed that silicon nitride related passivation may be affected by a long-term decrease in chemical passivation quality. A time and injection resolved visualization is introduced to quickly distinguish between these degradation features. Both bulk lifetime and chemical passivation quality are shown to recover at the same treatment conditions after longer treatment times.</dcterms:abstract>
    <dc:language>eng</dc:language>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/41740/3/Sperber_2-z1m8hyzh0bty6.pdf"/>
    <dc:contributor>Graf, Alexander</dc:contributor>
    <dc:contributor>Sperber, David</dc:contributor>
    <dc:creator>Heilemann, Adrian</dc:creator>
    <dc:creator>Graf, Alexander</dc:creator>
    <dc:contributor>Heilemann, Adrian</dc:contributor>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:title>Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments</dcterms:title>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
  </rdf:Description>
</rdf:RDF>

Bibliography of Konstanz

Yes