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Extraction of individual components of series resistance using TCAD simulations meeting the requirements of 2- and 3-dimensional carrier flow of IBC solar cells

Extraction of individual components of series resistance using TCAD simulations meeting the requirements of 2- and 3-dimensional carrier flow of IBC solar cells

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MICARD, Gabriel, Daniel SOMMER, Giso HAHN, Barbara TERHEIDEN, 2017. Extraction of individual components of series resistance using TCAD simulations meeting the requirements of 2- and 3-dimensional carrier flow of IBC solar cells. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Freiburg, 3. Apr 2017 - 5. Apr 2017. In: PREU, Ralf, ed.. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany. Amsterdam:Elsevier, pp. 113-119. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2017.09.325

@inproceedings{Micard2017Extra-41738, title={Extraction of individual components of series resistance using TCAD simulations meeting the requirements of 2- and 3-dimensional carrier flow of IBC solar cells}, year={2017}, doi={10.1016/j.egypro.2017.09.325}, number={124}, address={Amsterdam}, publisher={Elsevier}, series={Energy Procedia}, booktitle={7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany}, pages={113--119}, editor={Preu, Ralf}, author={Micard, Gabriel and Sommer, Daniel and Hahn, Giso and Terheiden, Barbara} }

2018-03-09T12:11:22Z 2017 terms-of-use Sommer, Daniel 2018-03-09T12:11:22Z Extraction of individual components of series resistance using TCAD simulations meeting the requirements of 2- and 3-dimensional carrier flow of IBC solar cells Micard, Gabriel Sommer, Daniel Hahn, Giso The series resistance (R<sub>S</sub>) of a solar cell, that influences fill factor and thus efficiency, is usually decomposed into individual components for development of optimization strategies. In this contribution we introduce a method to extract R<sub>s</sub> of each part of the solar cell from TCAD simulation using free energy loss analysis. This method is particularly relevant for modern cell concepts where only TCAD simulation describes correctly high injection phenomena in lowly doped wafers, and where 2- or 3-dimensional carrier flow occurs (PERC, PERT, IBC) invalidating the classical analytical models for Rs description. We compare the lumped R<sub>S</sub> value extracted from the FELA to the R<sub>S</sub> extracted from the Multiple Light Intensity Method (MLIM) for IBC solar cells with various geometries and wafer doping levels, with and without a front surface field, and show that it is quite accurate even when high injection phenomena induce a slight underestimation of R<sub>S</sub>. Hahn, Giso Terheiden, Barbara Micard, Gabriel Terheiden, Barbara eng

Dateiabrufe seit 09.03.2018 (Informationen über die Zugriffsstatistik)

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