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Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si

Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si

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STEFFENS, Jonathan, Hans–Werner BECKER, Sebastian GERKE, Sebastian JOOS, Giso HAHN, Barbara TERHEIDEN, 2017. Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Freiburg, 3. Apr 2017 - 5. Apr 2017. In: PREU, Ralf, ed.. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany. Amsterdam:Elsevier, pp. 180-187. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2017.09.315

@inproceedings{Steffens2017Repla-41737, title={Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si}, year={2017}, doi={10.1016/j.egypro.2017.09.315}, number={124}, address={Amsterdam}, publisher={Elsevier}, series={Energy Procedia}, booktitle={7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany}, pages={180--187}, editor={Preu, Ralf}, author={Steffens, Jonathan and Becker, Hans–Werner and Gerke, Sebastian and Joos, Sebastian and Hahn, Giso and Terheiden, Barbara} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/41737"> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-03-09T12:07:21Z</dcterms:available> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/41737/3/Steffens_2-hznikf30885l7.pdf"/> <dc:contributor>Gerke, Sebastian</dc:contributor> <dc:contributor>Steffens, Jonathan</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-03-09T12:07:21Z</dc:date> <dc:creator>Steffens, Jonathan</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:rights>terms-of-use</dc:rights> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Terheiden, Barbara</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/41737"/> <dcterms:rights rdf:resource="https://kops.uni-konstanz.de/page/termsofuse"/> <dc:creator>Joos, Sebastian</dc:creator> <dc:creator>Gerke, Sebastian</dc:creator> <dc:creator>Terheiden, Barbara</dc:creator> <dc:language>eng</dc:language> <dc:creator>Becker, Hans–Werner</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Becker, Hans–Werner</dc:contributor> <dc:contributor>Joos, Sebastian</dc:contributor> <dcterms:abstract xml:lang="eng">In order to predict hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) layers, Gerke et al.[1] proposed a model which requires just one nuclear resonant reaction analysis (NRA) and one Fourier transform infrared spectroscopy (FT-IR) as input. This contribution presents the possibility to substitute this single NRA measurement by a calibrated glow discharge optical emission spectroscopy (GD-OES) measurement. In the hydrogen concentration range of 2-30 at% relevant for a-Si:H layers there are currently no commercial calibration standards available, leading to the necessity of laboratory standards. Hydrogen depth profiles of a-Si:H layers exhibit plateaus of constant hydrogen concentration in a range large enough to qualify them as calibration standards. Therefore, six plasma enhanced physical vapor deposited (PECVD) a-Si:H layers with different hydrogen concentrations were prepared as laboratory standards. The absolute hydrogen concentration was determined using the NRA technique and the layer thickness was determined with a focused ion beam (FIB) in a scanning electron microscope (SEM). These results enabled a calibration of the GD-OES setup for a-Si:H, which successfully reproduced the NRA measurements of Gerke et al. [1].</dcterms:abstract> <dcterms:title>Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si</dcterms:title> <dcterms:issued>2017</dcterms:issued> <dc:contributor>Hahn, Giso</dc:contributor> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/41737/3/Steffens_2-hznikf30885l7.pdf"/> <dc:creator>Hahn, Giso</dc:creator> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> </rdf:Description> </rdf:RDF>

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