>20% Efficient 80 µm Thin Industrial-Type Large-Area Solar Cells from 100 µm Sawn c-Si Wafers

Schiele, Yvonne; Brinkmann, Nils; Ebser, Jan; Horbelt, Renate; Frey, Alexander; Engelhardt, Josh; Hahn, Giso; Terheiden, Barbara

doi:10.1109/PVSC.2015.7356220

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>20% Efficient 80 µm Thin Industrial-Type Large-Area Solar Cells from 100 µm Sawn c-Si Wafers

Publikationstyp:	Beitrag zu einer Konferenz
Publikationsstatus:	Published
URI (zitierfähiger Link):	http://nbn-resolving.de/urn:nbn:de:bsz:352-2-12zg4tcd9a9z79
Autor/innen:	Schiele, Yvonne; Brinkmann, Nils; Ebser, Jan; Horbelt, Renate; Frey, Alexander; Engelhardt, Josh; Hahn, Giso; Terheiden, Barbara
Erscheinungsjahr:	2015
Konferenz:	IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14. Jun 2015 - 19. Jun 2015, New Orleans
Erschienen in:	IEEE 42nd Photovoltaic Specialist Conference (PVSC). - Piscataway, NJ : IEEE Service Center, 2015. - ISBN 978-1-4799-7944-8
DOI (zitierfähiger Link):	https://dx.doi.org/10.1109/PVSC.2015.7356220
Zusammenfassung:	Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn enables a higher efficiency potential and a larger spread of Si materials to be employed for rear junction solar cell concepts which are advantageous for n-type devices. Industrial-type 80 μm thin large-area rear junction solar cells manufactured from 100 μm wire-sawn wafers exhibit an independently certified efficiency of 20.1% with VOC of 672 mV.
Fachgebiet (DDC):	530 Physik
Schlagwörter:	boron, n-type, photovoltaic cells, selective, silicon, thin wafers
Link zur Lizenz:	Nutzungsbedingungen
Universitätsbibliographie:	Ja

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SCHIELE, Yvonne, Nils BRINKMANN, Jan EBSER, Renate HORBELT, Alexander FREY, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2015. >20% Efficient 80 µm Thin Industrial-Type Large-Area Solar Cells from 100 µm Sawn c-Si Wafers. IEEE 42nd Photovoltaic Specialist Conference (PVSC). New Orleans, 14. Jun 2015 - 19. Jun 2015. In: IEEE 42nd Photovoltaic Specialist Conference (PVSC). Piscataway, NJ:IEEE Service Center. ISBN 978-1-4799-7944-8. Available under: doi: 10.1109/PVSC.2015.7356220

@inproceedings{Schiele2015Effic-39709, title={>20% Efficient 80 µm Thin Industrial-Type Large-Area Solar Cells from 100 µm Sawn c-Si Wafers}, year={2015}, doi={10.1109/PVSC.2015.7356220}, isbn={978-1-4799-7944-8}, address={Piscataway, NJ}, publisher={IEEE Service Center}, booktitle={IEEE 42nd Photovoltaic Specialist Conference (PVSC)}, author={Schiele, Yvonne and Brinkmann, Nils and Ebser, Jan and Horbelt, Renate and Frey, Alexander and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara} }

Frey, Alexander Engelhardt, Josh eng Brinkmann, Nils Hahn, Giso >20% Efficient 80 µm Thin Industrial-Type Large-Area Solar Cells from 100 µm Sawn c-Si Wafers Schiele, Yvonne Frey, Alexander Horbelt, Renate Engelhardt, Josh 2017-08-01T09:26:05Z Ebser, Jan Reducing the thickness of crystalline Si wafers to be processed into solar cells yields several significant benefits: PV module manufacturing cost can be reduced and the required diffusion length of minority carriers is smaller. The latter in turn enables a higher efficiency potential and a larger spread of Si materials to be employed for rear junction solar cell concepts which are advantageous for n-type devices. Industrial-type 80 μm thin large-area rear junction solar cells manufactured from 100 μm wire-sawn wafers exhibit an independently certified efficiency of 20.1% with VOC of 672 mV. Terheiden, Barbara Ebser, Jan Brinkmann, Nils Horbelt, Renate 2017-08-01T09:26:05Z Schiele, Yvonne 2015 Hahn, Giso terms-of-use Terheiden, Barbara