Electron spin relaxation in a transition-metal dichalcogenide quantum dot

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PEARCE, Alexander J., Guido BURKARD, 2017. Electron spin relaxation in a transition-metal dichalcogenide quantum dot. In: 2D Materials. 4(2), 025114. eISSN 2053-1583. Available under: doi: 10.1088/2053-1583/aa7364

@article{Pearce2017-06-09Elect-39354, title={Electron spin relaxation in a transition-metal dichalcogenide quantum dot}, year={2017}, doi={10.1088/2053-1583/aa7364}, number={2}, volume={4}, journal={2D Materials}, author={Pearce, Alexander J. and Burkard, Guido}, note={Article Number: 025114} }

Burkard, Guido Pearce, Alexander J. 2017-06-22T12:05:51Z Electron spin relaxation in a transition-metal dichalcogenide quantum dot We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for quantum dot nano-structures due to the combination of a band gap, spin-valley physics and strong spin–orbit coupling. First we will discuss which bound state solutions in different B-field regimes can be used as the basis for qubits states. We find that at low B-fields combined spin-valley Kramers qubits to be suitable, while at large magnetic fields pure spin or valley qubits can be envisioned. Then we present a discussion of the relaxation of a single electron spin mediated by electron–phonon interaction via various different relaxation channels. In the low B-field regime we consider the spin-valley Kramers qubits and include impurity mediated valley mixing which will arise in disordered quantum dots. Rashba spin–orbit admixture mechanisms allow for relaxation by in-plane phonons either via the deformation potential or by piezoelectric coupling, additionally direct spin-phonon mechanisms involving out-of-plane phonons give rise to relaxation. We find that the relaxation rates scale as α B<sup>6</sup> for both in-plane phonons coupling via deformation potential and the piezoelectric effect, while relaxation due to the direct spin-phonon coupling scales independant to B-field to lowest order but depends strongly on device mechanical tension. We will also discuss the relaxation mechanisms for pure spin or valley qubits formed in the large B-field regime. Burkard, Guido 2017-06-09 eng 2017-06-22T12:05:51Z Pearce, Alexander J.

Dateiabrufe seit 22.06.2017 (Informationen über die Zugriffsstatistik)

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