Annealing effects on SiOxNy thin films : Optical and morphological properties

Publikationstyp: Zeitschriftenartikel
Publikationsstatus: Published
Autor/innen: Perani, Martina; Brinkmann, Nils H.; Fazio, Maria Antonietta; Hammud, A.; Terheiden, Barbara; Cavalcoli, Daniela
Erscheinungsjahr: 2016
Erschienen in: Thin Solid Films ; 617 (2016). - S. 133-137. - ISSN 0040-6090. - eISSN 1879-2731
DOI (zitierfähiger Link): https://dx.doi.org/10.1016/j.tsf.2016.03.067
Zusammenfassung:
The annealing effect on the properties of silicon oxynitride (SiOxNy) thin films has been investigated. The present contribution aims to study the structural and optical properties of SiOxNy thin films deposited by plasma enhanced chemical vapor deposition in view of their application in the field of photovoltaics. Evolution of the surface morphology and increase of the optical band gap with the thermal treatment have been determined and discussed in view of the application of the film as an emitter layer in heterojunction solar cells.
Fachgebiet (DDC): 530 Physik
Schlagwörter: Silicon oxy-nitride; Atomic force microscopy; Tauc gap; Optical properties; Height–height correlation function; Image segmentation
Universitätsbibliographie: Ja

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PERANI, Martina, Nils H. BRINKMANN, Maria Antonietta FAZIO, A. HAMMUD, Barbara TERHEIDEN, Daniela CAVALCOLI, 2016. Annealing effects on SiOxNy thin films : Optical and morphological properties. In: Thin Solid Films. 617, pp. 133-137. ISSN 0040-6090. eISSN 1879-2731. Available under: doi: 10.1016/j.tsf.2016.03.067

@article{Perani2016Annea-37789, title={Annealing effects on SiOxNy thin films : Optical and morphological properties}, year={2016}, doi={10.1016/j.tsf.2016.03.067}, volume={617}, issn={0040-6090}, journal={Thin Solid Films}, pages={133--137}, author={Perani, Martina and Brinkmann, Nils H. and Fazio, Maria Antonietta and Hammud, A. and Terheiden, Barbara and Cavalcoli, Daniela} }

Hammud, A. 2017-02-28T16:54:34Z Perani, Martina Hammud, A. Cavalcoli, Daniela Fazio, Maria Antonietta Terheiden, Barbara Cavalcoli, Daniela eng The annealing effect on the properties of silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>) thin films has been investigated. The present contribution aims to study the structural and optical properties of SiO<sub>x</sub>N<sub>y</sub> thin films deposited by plasma enhanced chemical vapor deposition in view of their application in the field of photovoltaics. Evolution of the surface morphology and increase of the optical band gap with the thermal treatment have been determined and discussed in view of the application of the film as an emitter layer in heterojunction solar cells. Terheiden, Barbara 2017-02-28T16:54:34Z Annealing effects on SiOxNy thin films : Optical and morphological properties Brinkmann, Nils H. Fazio, Maria Antonietta 2016 Brinkmann, Nils H. Perani, Martina

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