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Annealing effects on SiOxNy thin films : Optical and morphological properties

Annealing effects on SiOxNy thin films : Optical and morphological properties

Type of Publication: Journal article
Publication status: Published
URI (citable link): http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1pbxtu3vhdcy31
Author: Perani, Martina; Brinkmann, Nils H.; Fazio, Maria Antonietta; Hammud, A.; Terheiden, Barbara; Cavalcoli, Daniela
Year of publication: 2016
Published in: Thin Solid Films ; 617 (2016). - pp. 133-137. - ISSN 0040-6090. - eISSN 1879-2731
DOI (citable link): https://dx.doi.org/10.1016/j.tsf.2016.03.067
Summary:
The annealing effect on the properties of silicon oxynitride (SiOxNy) thin films has been investigated. The present contribution aims to study the structural and optical properties of SiOxNy thin films deposited by plasma enhanced chemical vapor deposition in view of their application in the field of photovoltaics. Evolution of the surface morphology and increase of the optical band gap with the thermal treatment have been determined and discussed in view of the application of the film as an emitter layer in heterojunction solar cells.
Subject (DDC): 530 Physics
Keywords: Silicon oxy-nitride; Atomic force microscopy; Tauc gap; Optical properties; Height–height correlation function; Image segmentation
Link to License: Terms of use
Bibliography of Konstanz: Yes

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PERANI, Martina, Nils H. BRINKMANN, Maria Antonietta FAZIO, A. HAMMUD, Barbara TERHEIDEN, Daniela CAVALCOLI, 2016. Annealing effects on SiOxNy thin films : Optical and morphological properties. In: Thin Solid Films. 617, pp. 133-137. ISSN 0040-6090. eISSN 1879-2731. Available under: doi: 10.1016/j.tsf.2016.03.067

@article{Perani2016Annea-37789, title={Annealing effects on SiOxNy thin films : Optical and morphological properties}, year={2016}, doi={10.1016/j.tsf.2016.03.067}, volume={617}, issn={0040-6090}, journal={Thin Solid Films}, pages={133--137}, author={Perani, Martina and Brinkmann, Nils H. and Fazio, Maria Antonietta and Hammud, A. and Terheiden, Barbara and Cavalcoli, Daniela} }

Hammud, A. Fazio, Maria Antonietta 2017-02-28T16:54:34Z Perani, Martina Hammud, A. Terheiden, Barbara Cavalcoli, Daniela Cavalcoli, Daniela eng The annealing effect on the properties of silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>) thin films has been investigated. The present contribution aims to study the structural and optical properties of SiO<sub>x</sub>N<sub>y</sub> thin films deposited by plasma enhanced chemical vapor deposition in view of their application in the field of photovoltaics. Evolution of the surface morphology and increase of the optical band gap with the thermal treatment have been determined and discussed in view of the application of the film as an emitter layer in heterojunction solar cells. Terheiden, Barbara 2017-02-28T16:54:34Z Annealing effects on SiOxNy thin films : Optical and morphological properties Brinkmann, Nils H. terms-of-use 2016 Fazio, Maria Antonietta Brinkmann, Nils H. Perani, Martina

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