Enhanced Oxidation of Thermally Grown SiO2 Due to P Precipitates


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DASTGHEIB-SHIRAZI, Amir, Johannes RINDER, Gabriel MICARD, Michael STEYER, Giso HAHN, Barbara TERHEIDEN, 2016. Enhanced Oxidation of Thermally Grown SiO2 Due to P Precipitates. In: Energy Procedia. 92, pp. 457-465. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.127

@article{DastgheibShirazi2016Enhan-37666, title={Enhanced Oxidation of Thermally Grown SiO2 Due to P Precipitates}, year={2016}, doi={10.1016/j.egypro.2016.07.127}, volume={92}, journal={Energy Procedia}, pages={457--465}, author={Dastgheib-Shirazi, Amir and Rinder, Johannes and Micard, Gabriel and Steyer, Michael and Hahn, Giso and Terheiden, Barbara} }

Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO<sub>2</sub> depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO<sub>2</sub> layer also depends strongly on the emitter's electrically non-active P concentration. Experimental data show that an increase in P precipitate concentration has a significant influence on the growth kinetics of thermally grown SiO<sub>2</sub> layers. Despite constant charge carrier concentration in the emitter, an increase in growth rate up to a factor of 2 was measured in samples with increased inactive P concentration. Quantitative elemental analysis of the thermally grown SiO<sub>2</sub> layers further shows that the SiO<sub>2</sub> composition can be strongly influenced by the Si substrate's inactive P concentration. 2017-02-22T10:08:37Z Rinder, Johannes Rinder, Johannes terms-of-use Terheiden, Barbara Dastgheib-Shirazi, Amir Dastgheib-Shirazi, Amir Hahn, Giso eng 2017-02-22T10:08:37Z Terheiden, Barbara Steyer, Michael Micard, Gabriel Hahn, Giso Micard, Gabriel Enhanced Oxidation of Thermally Grown SiO<sub>2</sub> Due to P Precipitates Steyer, Michael 2016

Dateiabrufe seit 22.02.2017 (Informationen über die Zugriffsstatistik)

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