Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates
| Publikationstyp: | Zeitschriftenartikel |
| Publikationsstatus: | Published |
| Autor/innen: | Baldassarre, Leonetta; Sakat, Emilie; Frigerio, Jacopo; Frigerio, J. B. J.; Samarelli, Antonio; Giliberti, Valeria; Pellegrini, Giovanni; Fischer, Marco; Brida, Daniele; Ortolani, Michele et al. |
| Erscheinungsjahr: | 2016 |
| Erschienen in: | ECS Transactions ; 75 (2016), 8. - S. 247-251. - ISSN 1938-6737. - eISSN 1938-5862 |
| DOI (zitierfähiger Link): | https://dx.doi.org/10.1149/07508.0247ecst |
| Zusammenfassung: |
Heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work, we investigate, n-type doped Ge epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared.
|
| Fachgebiet (DDC): | 530 Physik |
| Universitätsbibliographie: | Ja |
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BALDASSARRE, Leonetta, Emilie SAKAT, Jacopo FRIGERIO, J. B. J. FRIGERIO, Antonio SAMARELLI, Valeria GILIBERTI, Giovanni PELLEGRINI, Marco FISCHER, Daniele BRIDA, Michele ORTOLANI, 2016. Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates. In: ECS Transactions. 75(8), pp. 247-251. ISSN 1938-6737. eISSN 1938-5862. Available under: doi: 10.1149/07508.0247ecst
@article{Baldassarre2016MidIn-37508, title={Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates}, year={2016}, doi={10.1149/07508.0247ecst}, number={8}, volume={75}, issn={1938-6737}, journal={ECS Transactions}, pages={247--251}, author={Baldassarre, Leonetta and Sakat, Emilie and Frigerio, Jacopo and Frigerio, J. B. J. and Samarelli, Antonio and Giliberti, Valeria and Pellegrini, Giovanni and Fischer, Marco and Brida, Daniele and Ortolani, Michele} }
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