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Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination

Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination

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SPERBER, David, Axel HERGUTH, Giso HAHN, 2016. Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination. In: Energy Procedia. 92, pp. 211-217. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.061

@article{Sperber2016Insta-36101, title={Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination}, year={2016}, doi={10.1016/j.egypro.2016.07.061}, volume={92}, journal={Energy Procedia}, pages={211--217}, author={Sperber, David and Herguth, Axel and Hahn, Giso} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/36101"> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:abstract xml:lang="eng">Hydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron doped floatzone silicon wafers that underwent a high temperature firing step. The passivation quality was monitored during thermal treatment at 75°C, 150°C and 250°C in darkness or under illumination. It was found that the passivation quality of the specific layers under investigation is far from stable in the course of time showing both deterioration and improvement features on a time scale of minutes to weeks. Furthermore, it was found that these changes occur in both darkness and under illumination, whereupon (stronger) illumination accelerates the changes. Via corona charging and capacitance voltage experiments it could be shown that the observed changes in the short term are mainly caused by changes in the chemical passivation quality.</dcterms:abstract> <dc:contributor>Herguth, Axel</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-11-25T14:32:46Z</dc:date> <dcterms:title>Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination</dcterms:title> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Sperber, David</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-11-25T14:32:46Z</dcterms:available> <dc:creator>Herguth, Axel</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.de/urn:nbn:de:bsz:352-20150914100631302-4485392-8"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36101/3/Sperber_0-374062.pdf"/> <dcterms:issued>2016</dcterms:issued> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36101/3/Sperber_0-374062.pdf"/> <dc:language>eng</dc:language> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/36101"/> <dc:creator>Sperber, David</dc:creator> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 25.11.2016 (Informationen über die Zugriffsstatistik)

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