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The Helium Field Effect Transistor (II) : Gated Transport of Surface-State Electrons Through Micro-constrictions

The Helium Field Effect Transistor (II) : Gated Transport of Surface-State Electrons Through Micro-constrictions

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SHABAN, Fatima, Mohamed ASHARI, Thomas LORENZ, Richard RAU, Elke SCHEER, Kimitoshi KONO, David G. REES, Paul LEIDERER, 2016. The Helium Field Effect Transistor (II) : Gated Transport of Surface-State Electrons Through Micro-constrictions. In: Journal of Low Temperature Physics. 185(3-4), pp. 339-353. ISSN 0022-2291. eISSN 1573-7357. Available under: doi: 10.1007/s10909-016-1641-6

@article{Shaban2016-11Heliu-35157, title={The Helium Field Effect Transistor (II) : Gated Transport of Surface-State Electrons Through Micro-constrictions}, year={2016}, doi={10.1007/s10909-016-1641-6}, number={3-4}, volume={185}, issn={0022-2291}, journal={Journal of Low Temperature Physics}, pages={339--353}, author={Shaban, Fatima and Ashari, Mohamed and Lorenz, Thomas and Rau, Richard and Scheer, Elke and Kono, Kimitoshi and Rees, David G. and Leiderer, Paul} }

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