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Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

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GERKE, Sebastian, Hans-Werner BECKER, Detlef ROGALLA, Florian SINGER, Nils BRINKMANN, Susanne FRITZ, Adnan HAMMUD, Philipp KELLER, Daniel SKORKA, Daniel SOMMER, Christof WEISS, Stefan FLEGE, Giso HAHN, Reinhart JOB, Barbara TERHEIDEN, 2016. Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon. In: Thin Solid Films. 598, pp. 161-169. ISSN 0040-6090. eISSN 1879-2731

@article{Gerke2016Influ-33550, title={Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon}, year={2016}, doi={10.1016/j.tsf.2015.11.063}, volume={598}, issn={0040-6090}, journal={Thin Solid Films}, pages={161--169}, author={Gerke, Sebastian and Becker, Hans-Werner and Rogalla, Detlef and Singer, Florian and Brinkmann, Nils and Fritz, Susanne and Hammud, Adnan and Keller, Philipp and Skorka, Daniel and Sommer, Daniel and Weiß, Christof and Flege, Stefan and Hahn, Giso and Job, Reinhart and Terheiden, Barbara} }

Keller, Philipp eng Brinkmann, Nils Singer, Florian Rogalla, Detlef Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E<sub>04</sub>) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for further hydrogen diffusion experiments which require an initially unhydrogenated drain layer. Brinkmann, Nils Job, Reinhart Keller, Philipp Fritz, Susanne Gerke, Sebastian Job, Reinhart Hammud, Adnan Weiß, Christof Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon Hahn, Giso Flege, Stefan Becker, Hans-Werner Rogalla, Detlef Skorka, Daniel Singer, Florian Terheiden, Barbara 2016-04-07T14:02:57Z Terheiden, Barbara Weiß, Christof Hahn, Giso Skorka, Daniel Gerke, Sebastian Sommer, Daniel Flege, Stefan 2016 Hammud, Adnan Sommer, Daniel Becker, Hans-Werner Fritz, Susanne 2016-04-07T14:02:57Z

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