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BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration

BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration

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HAHN, Giso, Svenja WILKING, Axel HERGUTH, 2016. BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration. In: Solid State Phenomena. 242, pp. 80-89. ISSN 0377-6883. eISSN 1662-9779

@article{Hahn2016BO-Re-33190, title={BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration}, year={2016}, doi={10.4028/www.scientific.net/SSP.242.80}, volume={242}, issn={0377-6883}, journal={Solid State Phenomena}, pages={80--89}, author={Hahn, Giso and Wilking, Svenja and Herguth, Axel} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/33190"> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-03-02T10:46:00Z</dcterms:available> <dc:language>eng</dc:language> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/33190"/> <dc:contributor>Hahn, Giso</dc:contributor> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:issued>2016</dcterms:issued> <dc:creator>Wilking, Svenja</dc:creator> <dc:creator>Hahn, Giso</dc:creator> <dc:creator>Herguth, Axel</dc:creator> <dc:contributor>Wilking, Svenja</dc:contributor> <dcterms:abstract xml:lang="eng">Boron-oxygen related defects formed under working conditions of a c-Si solar cell can be a showstopper for new cell concepts enabling higher conversion efficiencies. The recombination activity of these defects can be reduced to negligible values by a regeneration process under elevated temperatures and in the presence of excess charge carriers in the Si bulk. It is shown that this process also relies on the presence of H in the c-Si bulk. Regeneration kinetics can be sped up by higher temperatures, higher concentrations of excess charge carriers and higher H concentration in the c-Si bulk. But care has to be taken to avoid a destabilization reaction taking place at higher temperature, resulting in the BO-related defects being again present in the recombination-active state. A 3-state model with the corresponding reaction rates between the different defects states describes the experimental findings and can be used for predictions of an optimized regeneration process.</dcterms:abstract> <dcterms:title>BO-Related Defects : Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration</dcterms:title> <dcterms:rights rdf:resource="http://nbn-resolving.de/urn:nbn:de:bsz:352-20150914100631302-4485392-8"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-03-02T10:46:00Z</dc:date> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 02.03.2016 (Informationen über die Zugriffsstatistik)

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