Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon
| Type of Publication: | Contribution to a conference collection |
| Publication status: | Published |
| Author: | Hahn, Giso; Geiger, Patric; Sontag, D.; Fath, Peter; Bucher, Ernst |
| Year of publication: | 2001 |
| Conference: | 12th International Photovoltaic Science and Engineering Conference, Jun 11, 2001 - Jun 15, 2001, Jeju, Korea |
| Published in: | Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea. - Daejeon : Korea Institute of Energy Research, 2001. - pp. 191-192 |
| Subject (DDC): | 530 Physics |
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HAHN, Giso, Patric GEIGER, D. SONTAG, Peter FATH, Ernst BUCHER, 2001. Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon. 12th International Photovoltaic Science and Engineering Conference. Jeju, Korea, Jun 11, 2001 - Jun 15, 2001. In: Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea. Daejeon:Korea Institute of Energy Research, pp. 191-192
@inproceedings{Hahn2001Influ-33108, title={Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon}, year={2001}, address={Daejeon}, publisher={Korea Institute of Energy Research}, booktitle={Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea}, pages={191--192}, author={Hahn, Giso and Geiger, Patric and Sontag, D. and Fath, Peter and Bucher, Ernst} }
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