Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon
| Publikationstyp: | Beitrag zu einer Konferenz |
| Publikationsstatus: | Published |
| Autor/innen: | Hahn, Giso; Geiger, Patric; Sontag, D.; Fath, Peter; Bucher, Ernst |
| Erscheinungsjahr: | 2001 |
| Konferenz: | 12th International Photovoltaic Science and Engineering Conference, 11. Jun 2001 - 15. Jun 2001, Jeju, Korea |
| Erschienen in: | Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea. - Daejeon : Korea Institute of Energy Research, 2001. - S. 191-192 |
| Fachgebiet (DDC): | 530 Physik |
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HAHN, Giso, Patric GEIGER, D. SONTAG, Peter FATH, Ernst BUCHER, 2001. Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon. 12th International Photovoltaic Science and Engineering Conference. Jeju, Korea, 11. Jun 2001 - 15. Jun 2001. In: Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea. 12th International Photovoltaic Science and Engineering Conference. Jeju, Korea, 11. Jun 2001 - 15. Jun 2001. Daejeon:Korea Institute of Energy Research, pp. 191-192
@inproceedings{Hahn2001Influ-33108, title={Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon}, year={2001}, address={Daejeon}, publisher={Korea Institute of Energy Research}, booktitle={Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea}, pages={191--192}, author={Hahn, Giso and Geiger, Patric and Sontag, D. and Fath, Peter and Bucher, Ernst} }
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