Type of Publication: | Journal article |
Publication status: | Published |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-29e318zpvfet4 |
Author: | Vyvenko, Oleg F.; Bazlov, N.V.; Trushin, A.A.; Nadolinski, A.A.; Seibt, M.; Schröter, M.; Hahn, Giso |
Year of publication: | 2005 |
Published in: | Solid State Phenomena ; 108-109 (2005). - pp. 279-284. - ISSN 1012-0394. - eISSN 1662-9779 |
DOI (citable link): | https://dx.doi.org/10.4028/www.scientific.net/SSP.108-109.279 |
Summary: |
Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.
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Subject (DDC): | 530 Physics |
Keywords: | Hydrogenation, silicon, nickel silicide, precipitates, DLTS |
Link to License: | In Copyright |
Bibliography of Konstanz: | Yes |
VYVENKO, Oleg F., N.V. BAZLOV, A.A. TRUSHIN, A.A. NADOLINSKI, M. SEIBT, M. SCHRÖTER, Giso HAHN, 2005. Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. In: Solid State Phenomena. 108-109, pp. 279-284. ISSN 1012-0394. eISSN 1662-9779. Available under: doi: 10.4028/www.scientific.net/SSP.108-109.279
@article{Vyvenko2005Impac-32974, title={Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon}, year={2005}, doi={10.4028/www.scientific.net/SSP.108-109.279}, volume={108-109}, issn={1012-0394}, journal={Solid State Phenomena}, pages={279--284}, author={Vyvenko, Oleg F. and Bazlov, N.V. and Trushin, A.A. and Nadolinski, A.A. and Seibt, M. and Schröter, M. and Hahn, Giso} }
Vyvenko_2-29e318zpvfet4.pdf | 109 |