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Impact of hydrogenation on electrical properties of NiSi<sub>2</sub> precipitates in silicon

Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon

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Prüfsumme: MD5:c07b53e4ef2b64b693c4dfa393aa668d

VYVENKO, Oleg F., N.V. BAZLOV, A.A. TRUSHIN, A.A. NADOLINSKI, M. SEIBT, M. SCHRÖTER, Giso HAHN, 2005. Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon. In: Solid State Phenomena. 108-109, pp. 279-284. ISSN 1012-0394. eISSN 1662-9779. Available under: doi: 10.4028/www.scientific.net/SSP.108-109.279

@article{Vyvenko2005Impac-32974, title={Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon}, year={2005}, doi={10.4028/www.scientific.net/SSP.108-109.279}, volume={108-109}, issn={1012-0394}, journal={Solid State Phenomena}, pages={279--284}, author={Vyvenko, Oleg F. and Bazlov, N.V. and Trushin, A.A. and Nadolinski, A.A. and Seibt, M. and Schröter, M. and Hahn, Giso} }

Vyvenko, Oleg F. Trushin, A.A. Hahn, Giso Nadolinski, A.A. 2016-02-15T14:11:21Z eng Trushin, A.A. Nadolinski, A.A. 2016-02-15T14:11:21Z Schröter, M. Hahn, Giso Bazlov, N.V. terms-of-use 2005 Seibt, M. Vyvenko, Oleg F. Bazlov, N.V. Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi<sub>2</sub> precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm. Impact of hydrogenation on electrical properties of NiSi<sub>2</sub> precipitates in silicon Seibt, M. Schröter, M.

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