Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells
| Publikationstyp: | Beitrag zu einer Konferenz |
| Autor/innen: | Gatz, Sebastian; Plagwitz, Heiko; Altermatt, Pietro P.; Terheiden, Barbara; Brendel, Rolf |
| Erscheinungsjahr: | 2008 |
| Konferenz: | 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1. Sep 2008 - 5. Sep 2008, Valencia |
| Erschienen in: | The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Valencia, Spain, 1 - 5 September 2008 / Lincot, D. et al. (Hrsg.). - [München] : WIP-Renewable Energies, 2008. - S. 1033-1035. - ISBN 3-936338-24-8 |
| DOI (zitierfähiger Link): | https://dx.doi.org/10.4229/23rdEUPVSEC2008-2AO.2.5 |
| Zusammenfassung: |
The thermal stability of the amorphous silicon / silicon nitride double layer surface passivation on p-type crystalline silicon surfaces is investigated for various deposition temperatures of the silicon nitride capping layer. An increase of deposition temperature from 300°C to 400°C results in a significant improvement of the thermal stability of the surface passivation. The minimum surface recombination velocity achieved on p-type (1.5 cm) silicon wafers is (0.75 ± 0.6) cm/s and remains at (10 ± 0.5) cm/s even after 30 min annealing at 500°C.
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| Fachgebiet (DDC): | 530 Physik |
| Universitätsbibliographie: | Ja |
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GATZ, Sebastian, Heiko PLAGWITZ, Pietro P. ALTERMATT, Barbara TERHEIDEN, Rolf BRENDEL, 2008. Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells. 23rd European Photovoltaic Solar Energy Conference and Exhibition. Valencia, 1. Sep 2008 - 5. Sep 2008. In: LINCOT, D., ed. and others. The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Valencia, Spain, 1 - 5 September 2008. 23rd European Photovoltaic Solar Energy Conference and Exhibition. Valencia, 1. Sep 2008 - 5. Sep 2008. [München]:WIP-Renewable Energies, pp. 1033-1035. ISBN 3-936338-24-8. Available under: doi: 10.4229/23rdEUPVSEC2008-2AO.2.5
@inproceedings{Gatz2008Therm-32069, title={Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells}, year={2008}, doi={10.4229/23rdEUPVSEC2008-2AO.2.5}, isbn={3-936338-24-8}, address={[München]}, publisher={WIP-Renewable Energies}, booktitle={The compiled state-of-the-art of PV solar technology and deployment : 23rd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Valencia, Spain, 1 - 5 September 2008}, pages={1033--1035}, editor={Lincot, D.}, author={Gatz, Sebastian and Plagwitz, Heiko and Altermatt, Pietro P. and Terheiden, Barbara and Brendel, Rolf} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/32069"> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Brendel, Rolf</dc:creator> <dcterms:abstract xml:lang="eng">The thermal stability of the amorphous silicon / silicon nitride double layer surface passivation on p-type crystalline silicon surfaces is investigated for various deposition temperatures of the silicon nitride capping layer. An increase of deposition temperature from 300°C to 400°C results in a significant improvement of the thermal stability of the surface passivation. The minimum surface recombination velocity achieved on p-type (1.5 cm) silicon wafers is (0.75 ± 0.6) cm/s and remains at (10 ± 0.5) cm/s even after 30 min annealing at 500°C.</dcterms:abstract> <dc:contributor>Brendel, Rolf</dc:contributor> <dc:creator>Plagwitz, Heiko</dc:creator> <dc:contributor>Terheiden, Barbara</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:issued>2008</dcterms:issued> <dc:contributor>Plagwitz, Heiko</dc:contributor> <dc:creator>Altermatt, Pietro P.</dc:creator> <dc:creator>Terheiden, Barbara</dc:creator> <dc:creator>Gatz, Sebastian</dc:creator> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:language>eng</dc:language> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-11-05T10:04:25Z</dc:date> <dc:contributor>Gatz, Sebastian</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/32069"/> <dcterms:title>Thermally Stable Surface Passivation by A-Si:H / SiN Double Layers for Crystalline Silicon Solar Cells</dcterms:title> <dc:contributor>Altermatt, Pietro P.</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-11-05T10:04:25Z</dcterms:available> </rdf:Description> </rdf:RDF>
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