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Crystalline Silicon Thin-Film Solar Cells From the Porous Silicon Process Applying Convection Assisted Chemical Vapor Deposition

Crystalline Silicon Thin-Film Solar Cells From the Porous Silicon Process Applying Convection Assisted Chemical Vapor Deposition

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TERHEIDEN, Barbara, Thomas KUNZ, I. BURKERT, Renate HORBELT, Heiko PLAGWITZ, Rolf BRENDEL, 2008. Crystalline Silicon Thin-Film Solar Cells From the Porous Silicon Process Applying Convection Assisted Chemical Vapor Deposition. 23rd European Photovoltaic Solar Energy Conference and Exhibition. Valencia, 1. Sep 2008 - 5. Sep 2008. In: D. LINCOT, , ed. and others. Proceedings of the International Conference : held in Valencia, Spain, 1 - 5 September 2008 ; the compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference and Exhibition. Valencia, 1. Sep 2008 - 5. Sep 2008. [München]:WIP-Renewable Energies, pp. 2049-2052. ISBN 3-936338-24-8

@inproceedings{Terheiden2008Cryst-32003, title={Crystalline Silicon Thin-Film Solar Cells From the Porous Silicon Process Applying Convection Assisted Chemical Vapor Deposition}, year={2008}, doi={10.4229/23rdEUPVSEC2008-3CO.6.5}, isbn={3-936338-24-8}, address={[München]}, publisher={WIP-Renewable Energies}, booktitle={Proceedings of the International Conference : held in Valencia, Spain, 1 - 5 September 2008 ; the compiled state-of-the-art of PV solar technology and deployment}, pages={2049--2052}, editor={D. Lincot}, author={Terheiden, Barbara and Kunz, Thomas and Burkert, I. and Horbelt, Renate and Plagwitz, Heiko and Brendel, Rolf} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/32003"> <dcterms:title>Crystalline Silicon Thin-Film Solar Cells From the Porous Silicon Process Applying Convection Assisted Chemical Vapor Deposition</dcterms:title> <dc:language>eng</dc:language> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/32003"/> <dc:creator>Kunz, Thomas</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-10-28T10:00:06Z</dcterms:available> <dc:contributor>Terheiden, Barbara</dc:contributor> <dc:contributor>Horbelt, Renate</dc:contributor> <dc:contributor>Kunz, Thomas</dc:contributor> <dc:contributor>Burkert, I.</dc:contributor> <dc:contributor>Plagwitz, Heiko</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-10-28T10:00:06Z</dc:date> <dc:contributor>Brendel, Rolf</dc:contributor> <dc:creator>Burkert, I.</dc:creator> <dc:creator>Terheiden, Barbara</dc:creator> <dc:creator>Horbelt, Renate</dc:creator> <dcterms:issued>2008</dcterms:issued> <dcterms:abstract xml:lang="eng">Convection assisted chemical vapor deposition (CoCVD) is applied for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer process. The CoCVD reactor allows for Si deposition on large areas of up to 43 × 43 cm2. The bulk diffusion length of the epitaxial layer deposited by CoCVD on PSI substrates is Lbulk = (85±5) μm, which is almost three times the cell thickness and is similar to diffusion lengths achieved in commercial CVD reactors used in microelectronics. The simple cell process includes an epitaxially grown back surface field layer and a front surface passivation by a silicon nitride-coated amorphous silicon layer. Despite a planar front surface the cell efficiency is 12.0% (VOC = 590 mV, JSC = 26.7 mA/cm2, FF = 76.4%) for a cell size of 4 cm2. Thus the CoCVD method is suitable for fabricating efficient PSI solar cells.</dcterms:abstract> <dc:creator>Brendel, Rolf</dc:creator> <dc:creator>Plagwitz, Heiko</dc:creator> </rdf:Description> </rdf:RDF>

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