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Back contact monocrystalline thin-film silicon solar cells from the porous silicon process

Back contact monocrystalline thin-film silicon solar cells from the porous silicon process

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HAASE, Frerk, Renate HORBELT, Barbara TERHEIDEN, Heiko PLAGWITZ, Rolf BRENDEL, 2009. Back contact monocrystalline thin-film silicon solar cells from the porous silicon process. 34th IEEE Photovoltaic Specialists Conference. Philadelphia, 7. Jun 2009 - 12. Jun 2009. In: IEEE, , ed.. 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 ; Philadelphia, Pennsylvania, USA, 7 - 12 June 2009. 34th IEEE Photovoltaic Specialists Conference. Philadelphia, 7. Jun 2009 - 12. Jun 2009. Piscataway, NJ:IEEE, pp. 244-246. ISSN 0160-8371. ISBN 978-1-4244-2949-3. Available under: doi: 10.1109/PVSC.2009.5411686

@inproceedings{Haase2009conta-31897, title={Back contact monocrystalline thin-film silicon solar cells from the porous silicon process}, year={2009}, doi={10.1109/PVSC.2009.5411686}, isbn={978-1-4244-2949-3}, issn={0160-8371}, address={Piscataway, NJ}, publisher={IEEE}, booktitle={34th IEEE Photovoltaic Specialists Conference (PVSC), 2009 ; Philadelphia, Pennsylvania, USA, 7 - 12 June 2009}, pages={244--246}, editor={IEEE}, author={Haase, Frerk and Horbelt, Renate and Terheiden, Barbara and Plagwitz, Heiko and Brendel, Rolf} }

Brendel, Rolf Haase, Frerk Plagwitz, Heiko Horbelt, Renate 2015-10-05T09:38:30Z Horbelt, Renate Haase, Frerk Back contact monocrystalline thin-film silicon solar cells from the porous silicon process 2009 Brendel, Rolf Plagwitz, Heiko 2015-10-05T09:38:30Z Terheiden, Barbara Terheiden, Barbara eng We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm<sup>2</sup> and a cell thickness of 30 ¿m. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm<sup>2</sup>.

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