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Aluminum oxide for the surface passivation of high efficiency silicon solar cells : technology and advanced characterization

Aluminum oxide for the surface passivation of high efficiency silicon solar cells : technology and advanced characterization

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RICHTER, Armin, 2015. Aluminum oxide for the surface passivation of high efficiency silicon solar cells : technology and advanced characterization. Stuttgart:Fraunhofer Verl.. ISBN 978-3-8396-0847-0

@phdthesis{Richter2015Alumi-31796, title={Aluminum oxide for the surface passivation of high efficiency silicon solar cells : technology and advanced characterization}, year={2015}, author={Richter, Armin}, address={Konstanz}, school={Universität Konstanz} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/31796"> <dc:creator>Richter, Armin</dc:creator> <dc:contributor>Richter, Armin</dc:contributor> <dc:publisher>Stuttgart</dc:publisher> <dcterms:title>Aluminum oxide for the surface passivation of high efficiency silicon solar cells : technology and advanced characterization</dcterms:title> <dc:language>eng</dc:language> <dcterms:abstract xml:lang="eng">Thin layers of aluminum oxide (Al2O3) are highly relevant for various high-efficiency silicon solar cell designs, as Al2O3 can provide an excellent passivation of crystalline silicon surfaces. One main part of this thesis deals with the evaluation, optimization and in-depth analysis of such passivating Al2O3 layers deposited by atomic layer deposition. In particular the results regarding the properties of the c Si/Al2O3 interface allowed to identify the underlying passivation mechanisms for various process variations. Another part of the thesis deals with the realization of p+nn+ silicon solar cells through the application and evaluation of industrially feasible technologies, i.e. for the front side boron-doped p+ emitter (based on the Al2O3 surface passivation), as well as for the diffusion and passivation of the rear side n+ back surface field. The excellent silicon surface passivation obtained in this thesis allowed in addition the experimental investigation of the Auger recombination in high-purity crystalline silicon with an improved precision, based on which results a new parameterization of the Auger recombination was developed. This parameterization was used to reassess the intrinsic efficiency limit of crystalline silicon solar cells.</dcterms:abstract> <dc:publisher>Fraunhofer Verl.</dc:publisher> <bibo:issn>978-3-8396-0847-0</bibo:issn> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/31796"/> <dcterms:issued>2015</dcterms:issued> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-09-21T13:19:31Z</dc:date> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-09-21T13:19:31Z</dcterms:available> </rdf:Description> </rdf:RDF>

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