Mesoporous Germanium Formation by Electrochemical Etching

Zitieren

Dateien zu dieser Ressource

Dateien Größe Format Anzeige

Zu diesem Dokument gibt es keine Dateien.

GARRALAGA ROJAS, Enrique, Heiko PLAGWITZ, Barbara TERHEIDEN, Jan HENSEN, C. BAUR, G. LA ROCHE, Gerhard F. X. STROBL, Rolf BRENDEL, 2009. Mesoporous Germanium Formation by Electrochemical Etching. In: Journal of The Electrochemical Society. 156(8), pp. D310-D313. ISSN 0013-4651. eISSN 1945-7111. Available under: doi: 10.1149/1.3147271

@article{GarralagaRojas2009Mesop-31715, title={Mesoporous Germanium Formation by Electrochemical Etching}, year={2009}, doi={10.1149/1.3147271}, number={8}, volume={156}, issn={0013-4651}, journal={Journal of The Electrochemical Society}, pages={D310--D313}, author={Garralaga Rojas, Enrique and Plagwitz, Heiko and Terheiden, Barbara and Hensen, Jan and Baur, C. and La Roche, G. and Strobl, Gerhard F. X. and Brendel, Rolf} }

Plagwitz, Heiko Brendel, Rolf La Roche, G. Plagwitz, Heiko 2015-09-09T09:38:38Z 2015-09-09T09:38:38Z Baur, C. Garralaga Rojas, Enrique Terheiden, Barbara Strobl, Gerhard F. X. Hensen, Jan Terheiden, Barbara Strobl, Gerhard F. X. Mesoporous Germanium Formation by Electrochemical Etching La Roche, G. Hensen, Jan Uniform thick mesoporous germanium layers are reproducibly formed on 4 in. p-type Ge wafers by electrochemical etching in highly concentrated HF electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the porous layer. The growth rate of the porous Ge layer is therefore given by the difference between the etch rate at the porous layer/substrate wafer interface and the dissolution rate at the electrolyte/porous layer interface. The growth rate lies in the range of 0.071–2.7 nm/min for etching current densities of 0.1–80mA/cm<sup>2</sup> , while both the etch rate and the dissolution rate lie in the range of several micrometers per minute. We define the substrate usage as the ratio of the growth rate and the etch rate. This substrate usage determines the growth efficiency of the porous layer and lies in the range of 0.2–2%. Thus, the substrate wafer is thinned substantially during anodic porous layer formation. Constantly alternating from an anodic to a cathodic bias prevents the thinning of the substrate. The dissolution rate decreases, and the usage increases up to 98%. Baur, C. eng Garralaga Rojas, Enrique 2009 Brendel, Rolf

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto