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Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes

Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes

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GARRALAGA ROJAS, Enrique, Barbara TERHEIDEN, Heiko PLAGWITZ, Jan HENSEN, C. BAUR, Gerhard F. X. STROBL, Rolf BRENDEL, 2010. Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes. In: Electrochemistry Communications. 12(2), pp. 231-233. ISSN 1388-2481. eISSN 1873-1902. Available under: doi: 10.1016/j.elecom.2009.11.033

@article{GarralagaRojas2010Forma-31714, title={Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes}, year={2010}, doi={10.1016/j.elecom.2009.11.033}, number={2}, volume={12}, issn={1388-2481}, journal={Electrochemistry Communications}, pages={231--233}, author={Garralaga Rojas, Enrique and Terheiden, Barbara and Plagwitz, Heiko and Hensen, Jan and Baur, C. and Strobl, Gerhard F. X. and Brendel, Rolf} }

Terheiden, Barbara Baur, C. Garralaga Rojas, Enrique Terheiden, Barbara Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes Plagwitz, Heiko 2015-09-09T09:34:27Z We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based electrolytes. Pore formation by anodic etching in germanium leads to a constant dissolution of the already formed porous layer plus substrate. Alternating the etching bias from anodic to cathodic bias enhances the passivation of the pore walls and substrate. The formation of porous multilayers is possible, since the starting layer is not dissolved during the formation of the separation layer. We report on the production of mesoporous double layers in Ge with different porosities. The change in the porosity of the porous layers is achieved by varying the anodic etching current and the HF concentration of the electrolyte. Porosities in the range of 25–65% are obtained for etching current densities of 1–15 mA cm<sup>−2</sup> with the specific resistivity of the Ge substrates lying in the (0.020–0.032) Ω cm range and electrolyte HF concentrations in the range of 35–50 wt.%. Baur, C. Plagwitz, Heiko eng Garralaga Rojas, Enrique Strobl, Gerhard F. X. Hensen, Jan 2010 Brendel, Rolf Strobl, Gerhard F. X. 2015-09-09T09:34:27Z Hensen, Jan Brendel, Rolf

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