Morphology and Hydrogen in Passivating Amorphous Silicon Layers


Dateien zu dieser Ressource

Prüfsumme: MD5:9d34298d505dffd4e8e486fe3ff48032

GERKE, Sebastian, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, Reinhart JOB, Barbara TERHEIDEN, 2015. Morphology and Hydrogen in Passivating Amorphous Silicon Layers. In: Energy Procedia. 77, pp. 791-798. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2015.07.112

@article{Gerke2015Morph-31702, title={Morphology and Hydrogen in Passivating Amorphous Silicon Layers}, year={2015}, doi={10.1016/j.egypro.2015.07.112}, volume={77}, journal={Energy Procedia}, pages={791--798}, author={Gerke, Sebastian and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso and Job, Reinhart and Terheiden, Barbara} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dcterms:issued>2015</dcterms:issued> <dc:creator>Gerke, Sebastian</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dspace:hasBitstream rdf:resource=""/> <dcterms:available rdf:datatype="">2015-09-08T07:41:39Z</dcterms:available> <dc:language>eng</dc:language> <bibo:uri rdf:resource=""/> <dcterms:rights rdf:resource=""/> <dc:contributor>Terheiden, Barbara</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Job, Reinhart</dc:contributor> <dc:contributor>Hahn, Giso</dc:contributor> <dspace:isPartOfCollection rdf:resource=""/> <dc:creator>Becker, Hans-Werner</dc:creator> <dcterms:abstract xml:lang="eng">Hydrogenated intrinsic amorphous silicon ((i)°a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i)°a-Si:H layer as well as the doping type and concentration of the c-Si wafer. The doping type of the c-Si wafer also affects the growth of the amorphous network. It is found that for moderately doped p-type c-Si a non-columnar (i)°a-Si:H layer yields a significantly better and more stable passivation already during thermal anneal and illumination, while for passivating n-type c-Si a columnar layer is recommended. Passivating lowly doped c-Si by (i)°a-Si:H is not dependent on morphology. Combining different (i)°a-Si:H morphologies to a multi-layer stack improves the quality of surface passivation. Hydrogen embedded in a well passivating but hydrogen-permeable columnar layer supports good surface passivation when covered by a non-columnar layer, featuring a fast growing layer acting as a hydrogen barrier and enhancing surface passivation quality.</dcterms:abstract> <dc:creator>Terheiden, Barbara</dc:creator> <dc:rights>terms-of-use</dc:rights> <dc:date rdf:datatype="">2015-09-08T07:41:39Z</dc:date> <dc:contributor>Gerke, Sebastian</dc:contributor> <dcterms:hasPart rdf:resource=""/> <dcterms:title>Morphology and Hydrogen in Passivating Amorphous Silicon Layers</dcterms:title> <dcterms:isPartOf rdf:resource=""/> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Rogalla, Detlef</dc:contributor> <dc:contributor>Becker, Hans-Werner</dc:contributor> <dc:creator>Rogalla, Detlef</dc:creator> <dc:creator>Job, Reinhart</dc:creator> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 08.09.2015 (Informationen über die Zugriffsstatistik)

Gerke_0-300018.pdf 124

Das Dokument erscheint in:

KOPS Suche


Mein Benutzerkonto