Morphology and Hydrogen in Passivating Amorphous Silicon Layers

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GERKE, Sebastian, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, Reinhart JOB, Barbara TERHEIDEN, 2015. Morphology and Hydrogen in Passivating Amorphous Silicon Layers. In: Energy Procedia. 77, pp. 791-798. eISSN 1876-6102

@article{Gerke2015Morph-31702, title={Morphology and Hydrogen in Passivating Amorphous Silicon Layers}, year={2015}, doi={10.1016/j.egypro.2015.07.112}, volume={77}, journal={Energy Procedia}, pages={791--798}, author={Gerke, Sebastian and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso and Job, Reinhart and Terheiden, Barbara} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/31702"> <dcterms:issued>2015</dcterms:issued> <dc:creator>Gerke, Sebastian</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-09-08T07:41:39Z</dcterms:available> <dc:language>eng</dc:language> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/31702"/> <dc:contributor>Terheiden, Barbara</dc:contributor> <dc:contributor>Job, Reinhart</dc:contributor> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:rights rdf:resource="http://nbn-resolving.de/urn:nbn:de:bsz:352-20150914100631302-4485392-8"/> <dcterms:abstract xml:lang="eng">Hydrogenated intrinsic amorphous silicon ((i)°a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i)°a-Si:H layer as well as the doping type and concentration of the c-Si wafer. The doping type of the c-Si wafer also affects the growth of the amorphous network. It is found that for moderately doped p-type c-Si a non-columnar (i)°a-Si:H layer yields a significantly better and more stable passivation already during thermal anneal and illumination, while for passivating n-type c-Si a columnar layer is recommended. Passivating lowly doped c-Si by (i)°a-Si:H is not dependent on morphology. Combining different (i)°a-Si:H morphologies to a multi-layer stack improves the quality of surface passivation. Hydrogen embedded in a well passivating but hydrogen-permeable columnar layer supports good surface passivation when covered by a non-columnar layer, featuring a fast growing layer acting as a hydrogen barrier and enhancing surface passivation quality.</dcterms:abstract> <dc:creator>Terheiden, Barbara</dc:creator> <dc:creator>Becker, Hans-Werner</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-09-08T07:41:39Z</dc:date> <dc:contributor>Gerke, Sebastian</dc:contributor> <dcterms:title>Morphology and Hydrogen in Passivating Amorphous Silicon Layers</dcterms:title> <dc:contributor>Rogalla, Detlef</dc:contributor> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Becker, Hans-Werner</dc:contributor> <dc:creator>Rogalla, Detlef</dc:creator> <dc:creator>Job, Reinhart</dc:creator> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 08.09.2015 (Informationen über die Zugriffsstatistik)

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