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Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)

Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)

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GARRALAGA ROJAS, Enrique, Barbara TERHEIDEN, Heiko PLAGWITZ, Jan HENSEN, Volker WIEDEMEIER, Gerhard BERTH, Artur ZRENNER, Rolf BRENDEL, 2011. Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111). In: Thin Solid Films. 520(1), pp. 606-609. ISSN 0040-6090. eISSN 1879-2731. Available under: doi: 10.1016/j.tsf.2011.07.063

@article{GarralagaRojas2011Lifto-31601, title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)}, year={2011}, doi={10.1016/j.tsf.2011.07.063}, number={1}, volume={520}, issn={0040-6090}, journal={Thin Solid Films}, pages={606--609}, author={Garralaga Rojas, Enrique and Terheiden, Barbara and Plagwitz, Heiko and Hensen, Jan and Wiedemeier, Volker and Berth, Gerhard and Zrenner, Artur and Brendel, Rolf} }

Plagwitz, Heiko Garralaga Rojas, Enrique Brendel, Rolf Hensen, Jan Wiedemeier, Volker Zrenner, Artur 2015-08-19T13:14:31Z Hensen, Jan Berth, Gerhard eng Zrenner, Artur Wiedemeier, Volker Garralaga Rojas, Enrique Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111) 2015-08-19T13:14:31Z Terheiden, Barbara Brendel, Rolf Plagwitz, Heiko 2011 Terheiden, Barbara Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial growth of III–V compound semiconductor stacks on their top for the production of multi-junction solar cells and very thin electronic devices. We demonstrate transfer of porous layers after an annealing process in hydrogen atmosphere. Electron Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis shows a decrease in the Raman signal intensity after etching and a subsequent increase after annealing while no shift is observed. By means of Atomic Force Microscopy, analysis the surface appearance after the etching and annealing steps can be visualized. The mean surface roughness varies during the process from 0.55 nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing. The decrease of average roughness after etching is caused by an electropolishing step prior to porous formation. Despite of slight increase of mean surface roughness after annealing the samples are still appropriate for high quality epitaxial growth and subsequent lift-off. Berth, Gerhard

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