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Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

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KUNZ, Thomas, Maik T. HESSMANN, Sven SEREN, Bernd MEIDEL, Barbara TERHEIDEN, Christoph J. BRABEC, 2013. Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels. In: Journal of Applied Physics. 113(2), 023514. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.4773110

@article{Kunz2013Dopan-31565, title={Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels}, year={2013}, doi={10.1063/1.4773110}, number={2}, volume={113}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Kunz, Thomas and Hessmann, Maik T. and Seren, Sven and Meidel, Bernd and Terheiden, Barbara and Brabec, Christoph J.}, note={Article Number: 023514} }

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