Asymmetric resonant exchange qubit under the influence of electrical noise


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RUSS, Maximilian, Guido BURKARD, 2015. Asymmetric resonant exchange qubit under the influence of electrical noise. In: Physical Review B. 91(23), 235411. ISSN 0163-1829. eISSN 1095-3795. Available under: doi: 10.1103/PhysRevB.91.235411

@article{Russ2015Asymm-31376, title={Asymmetric resonant exchange qubit under the influence of electrical noise}, year={2015}, doi={10.1103/PhysRevB.91.235411}, number={23}, volume={91}, issn={0163-1829}, journal={Physical Review B}, author={Russ, Maximilian and Burkard, Guido}, note={Article Number: 235411} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dcterms:title>Asymmetric resonant exchange qubit under the influence of electrical noise</dcterms:title> <dc:language>eng</dc:language> <dc:contributor>Burkard, Guido</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dcterms:issued>2015</dcterms:issued> <dcterms:available rdf:datatype="">2015-07-07T13:19:47Z</dcterms:available> <dcterms:isPartOf rdf:resource=""/> <dc:creator>Burkard, Guido</dc:creator> <dc:date rdf:datatype="">2015-07-07T13:19:47Z</dc:date> <dc:creator>Russ, Maximilian</dc:creator> <dcterms:abstract xml:lang="eng">We investigate the influence of electrical charge noise on a resonant exchange (RX) qubit in a triple quantum dot. This RX qubit is a variation of the exchange-only spin qubit which responds to a narrow-band resonant frequency. Our noise model includes uncorrelated charge noise in each quantum dot giving rise to two independent (noisy) bias parameters ɛ and Δ. We calculate the energy splitting of the two qubit states as a function of these two bias detuning parameters to find “sweet spots,” where the qubit is least susceptible to noise. Our investigation shows that such sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters. The location of the sweet spots in the (ɛ,Δ) plane depends on the hopping strength and asymmetry between the quantum dots. In the regime of weak charge noise, we identify a new favorable operating regime for the RX qubit based on these sweet spots.</dcterms:abstract> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:contributor>Russ, Maximilian</dc:contributor> <bibo:uri rdf:resource=""/> <dspace:isPartOfCollection rdf:resource=""/> </rdf:Description> </rdf:RDF>

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