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Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells

Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells

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SCHIELE, Yvonne, Giso HAHN, Barbara TERHEIDEN, 2014. Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells. European Photovoltaic Solar Energy Conference and Exhibition ; 29. Amsterdam, 22. Sep 2014 - 26. Sep 2014. In: WIP, , ed., ED. BY T. P. BOKHOVEN ..., ed.. 29th European PV Solar Energy Conference and Exhibition : proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014. European Photovoltaic Solar Energy Conference and Exhibition ; 29. Amsterdam, 22. Sep 2014 - 26. Sep 2014. München:WIP, pp. 825-829. ISSN 2196-100X. ISBN 3-936338-34-5

@inproceedings{Schiele2014Conta-31267, title={Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells}, year={2014}, doi={10.4229/EUPVSEC20142014-2AV.2.5}, isbn={3-936338-34-5}, issn={2196-100X}, address={München}, publisher={WIP}, booktitle={29th European PV Solar Energy Conference and Exhibition : proceedings of the international conference held in Amsterdam, The Netherlands, 22 - 26 September 2014}, pages={825--829}, editor={WIP and ed. by T. P. Bokhoven ...}, author={Schiele, Yvonne and Hahn, Giso and Terheiden, Barbara} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/31267"> <dc:language>eng</dc:language> <dcterms:abstract xml:lang="eng">In p-type c-Si solar cells, selective emitter structures generated by emitter etch-back (EEB) have been introduced in recent years in order to minimize electrical losses in the phosphorous emitter being one of the dominant factors limiting the performance of standard screen-printed p-type c-Si solar cells. In this work, a homogeneously or selectively etched-back boron emitter is demonstrated to provide additional benefits yielding an enhanced conversion efficiency in n-type Si solar cells. By means of subsequent B-EEB, contacting and recombination properties of B emitters dependent on their sheet resistance, surface concentration, and profile depth are studied indicating the latter to be the crucial parameter. Based on this, the characteristics of the optimal B emitter regarding low saturation current density and low specific contact resistivity are determined for the cases of homogeneous and selective etch-back. By employing the selectively etched-back B emitter in initial solar cells, a VOC gain of 5 mV and a significant shunting reduction compared with homogeneously doped devices is achieved.</dcterms:abstract> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-06-24T09:47:27Z</dc:date> <dc:contributor>Schiele, Yvonne</dc:contributor> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Terheiden, Barbara</dc:contributor> <dcterms:title>Contacting and recombination analysis of boron emitters via etch-back for advanced n-Type Si solar cells</dcterms:title> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/31267"/> <dcterms:rights rdf:resource="http://nbn-resolving.de/urn:nbn:de:bsz:352-20150914100631302-4485392-8"/> <dc:creator>Terheiden, Barbara</dc:creator> <dcterms:issued>2014</dcterms:issued> <dc:creator>Schiele, Yvonne</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2015-06-24T09:47:27Z</dcterms:available> <dc:contributor>Hahn, Giso</dc:contributor> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 24.06.2015 (Informationen über die Zugriffsstatistik)

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