Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators

Faust, Thomas; Rieger, Johannes; Seitner, Maximilian; Kotthaus, Jörg P.; Weig, Eva M.

Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators

Files

Faust_0-288096.pdf(702.89 KB)

Date

2014

Authors

Faust, Thomas

Rieger, Johannes

Seitner, Maximilian

Kotthaus, Jörg P.

Weig, Eva M.

Publication type

Journal article

Published in

Physical Review B ; 89 (2014), 10. - 100102(R). - ISSN 1098-0121. - eISSN 1095-3795

Abstract

The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long-wavelength resonator modes to the high frequency phonon environment.

Subject (DDC)

530 Physics

Cite This

ISO 690

FAUST, Thomas, Johannes RIEGER, Maximilian SEITNER, Jörg P. KOTTHAUS, Eva M. WEIG, 2014. Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators. In: Physical Review B. 89(10), 100102(R). ISSN 1098-0121. eISSN 1095-3795. Available under: doi: 10.1103/PhysRevB.89.100102

BibTex

@article{Faust2014Signa-30913,
  year={2014},
  doi={10.1103/PhysRevB.89.100102},
  title={Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators},
  number={10},
  volume={89},
  issn={1098-0121},
  journal={Physical Review B},
  author={Faust, Thomas and Rieger, Johannes and Seitner, Maximilian and Kotthaus, Jörg P. and Weig, Eva M.},
  note={Article Number: 100102(R)}
}

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