Improvement of MC Si solar cells by Al-gettering and hydrogen passivation

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HAHN, Giso, Peter FATH, Ernst BUCHER, 1997. Improvement of MC Si solar cells by Al-gettering and hydrogen passivation. 26th IEEE Photovoltaic Specialists Conference. Anaheim, 29. Sep 1997 - 3. Okt 1997. In: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, , ed.. Conference record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 : Anaheim Marriott, Anaheim, CA, 29 September - 03 October 1997. 26th IEEE Photovoltaic Specialists Conference. Anaheim, 29. Sep 1997 - 3. Okt 1997. Piscataway, NJ:IEEE Service Center, pp. 75-78. ISSN 0160-8371. ISBN 0-7803-3767-0

@inproceedings{Hahn1997Impro-30891, title={Improvement of MC Si solar cells by Al-gettering and hydrogen passivation}, year={1997}, doi={10.1109/PVSC.1997.653928}, isbn={0-7803-3767-0}, issn={0160-8371}, address={Piscataway, NJ}, publisher={IEEE Service Center}, booktitle={Conference record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 : Anaheim Marriott, Anaheim, CA, 29 September - 03 October 1997}, pages={75--78}, editor={Institute of Electrical and Electronics Engineers}, author={Hahn, Giso and Fath, Peter and Bucher, Ernst} }

Bucher, Ernst 1997 Hahn, Giso Fath, Peter Bucher, Ernst 2015-05-06T08:02:50Z Hahn, Giso Improvement of MC Si solar cells by Al-gettering and hydrogen passivation 2015-05-06T08:02:50Z Systematic Al-gettering and MIRHP (microwave induced remote hydrogen plasma) passivation studies have been carried out on various ribbon (EFG, Bayer RGS) and multicrystalline (mc) Si materials (Baysix, Eurosil, Solarex, EMC) with initial minority carrier diffusion lengths varying from <30-300 μm. Gettering was investigated between 700-1050°C. Solar cells with optimized Al-gettering conditions including a selective emitter structure were characterized before and after MIRHP passivation in order to separate the benefits of gettering and hydrogen passivation. We could achieve improvements for most materials by Al-gettering and an increase in all cell parameters for all materials by MIRHP passivation, with an increase in efficiency for the ribbon Si materials of up to 30% relative. Fath, Peter eng

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