Hydrogen passivation of ribbon silicon-electronic properties and solar cell results

Hahn, Giso; Geiger, Patric; Fath, Peter; Bucher, Ernst

doi:10.1109/PVSC.2000.915762

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Hydrogen passivation of ribbon silicon-electronic properties and solar cell results

Publikationstyp:	Beitrag zu einer Konferenz
URI (zitierfähiger Link):	http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1jd05kdo45mm90
Autor/innen:	Hahn, Giso; Geiger, Patric; Fath, Peter; Bucher, Ernst
Erscheinungsjahr:	2000
Konferenz:	28th IEEE Photovoltaic Specialists Conference (PVSC), 15. Sep 2000 - 22. Sep 2000, Anchorage
Erschienen in:	Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000 / IEEE (Hrsg.). - Piscataway, NJ : IEEE Operations Center, 2000. - S. 95-98. - ISSN 0160-8371. - ISBN 0-7803-5772-8
DOI (zitierfähiger Link):	https://dx.doi.org/10.1109/PVSC.2000.915762
Zusammenfassung:	Hydrogen bulk passivation of crystal defects plays a major role during solar cell processing of multicrystalline ribbon silicon material. In this study, the authors concentrate on the diffusion and effusion kinetics of hydrogen in different ribbon silicon materials (RGS (Bayer AG), EFG (ASE), String Ribbon (Evergreen Solar)). Electronic properties like majority charge carrier mobility and concentration were investigated by temperature dependent Hall measurements. Deuterium profiles determined with the SIMS method reveal that the diffusion velocity is strongly linked with the interstitial oxygen concentration present in the different materials. Taking into account these results, a confirmed record high efficiency of 12.5% on Bayer RGS silicon (4 cm²) was achieved with an optimized hydrogen passivation step.
Fachgebiet (DDC):	530 Physik
Link zur Lizenz:	Nutzungsbedingungen

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HAHN, Giso, Patric GEIGER, Peter FATH, Ernst BUCHER, 2000. Hydrogen passivation of ribbon silicon-electronic properties and solar cell results. 28th IEEE Photovoltaic Specialists Conference (PVSC). Anchorage, 15. Sep 2000 - 22. Sep 2000. In: IEEE, , ed.. Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000. Piscataway, NJ:IEEE Operations Center, pp. 95-98. ISSN 0160-8371. ISBN 0-7803-5772-8. Available under: doi: 10.1109/PVSC.2000.915762

@inproceedings{Hahn2000Hydro-30890, title={Hydrogen passivation of ribbon silicon-electronic properties and solar cell results}, year={2000}, doi={10.1109/PVSC.2000.915762}, isbn={0-7803-5772-8}, issn={0160-8371}, address={Piscataway, NJ}, publisher={IEEE Operations Center}, booktitle={Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000}, pages={95--98}, editor={IEEE}, author={Hahn, Giso and Geiger, Patric and Fath, Peter and Bucher, Ernst} }

2015-05-06T07:55:00Z Fath, Peter 2015-05-06T07:55:00Z Bucher, Ernst Hydrogen bulk passivation of crystal defects plays a major role during solar cell processing of multicrystalline ribbon silicon material. In this study, the authors concentrate on the diffusion and effusion kinetics of hydrogen in different ribbon silicon materials (RGS (Bayer AG), EFG (ASE), String Ribbon (Evergreen Solar)). Electronic properties like majority charge carrier mobility and concentration were investigated by temperature dependent Hall measurements. Deuterium profiles determined with the SIMS method reveal that the diffusion velocity is strongly linked with the interstitial oxygen concentration present in the different materials. Taking into account these results, a confirmed record high efficiency of 12.5% on Bayer RGS silicon (4 cm<sup>2</sup>) was achieved with an optimized hydrogen passivation step. Geiger, Patric Hahn, Giso Geiger, Patric Hahn, Giso Hydrogen passivation of ribbon silicon-electronic properties and solar cell results Fath, Peter eng Bucher, Ernst 2000 terms-of-use