Hydrogen passivation of ribbon silicon-electronic properties and solar cell results

Hahn, Giso; Geiger, Patric; Fath, Peter; Bucher, Ernst

Hydrogen passivation of ribbon silicon-electronic properties and solar cell results

Files

Hahn_2-1jd05kdo45mm90.pdf(867.52 KB)

Date

2000

Authors

Hahn, Giso

Geiger, Patric

Fath, Peter

Bucher, Ernst

Publication type

Contribution to a conference collection

Published in

Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000 / IEEE (ed.). - Piscataway, NJ : IEEE Operations Center, 2000. - pp. 95-98. - ISSN 0160-8371. - ISBN 0-7803-5772-8

Abstract

Hydrogen bulk passivation of crystal defects plays a major role during solar cell processing of multicrystalline ribbon silicon material. In this study, the authors concentrate on the diffusion and effusion kinetics of hydrogen in different ribbon silicon materials (RGS (Bayer AG), EFG (ASE), String Ribbon (Evergreen Solar)). Electronic properties like majority charge carrier mobility and concentration were investigated by temperature dependent Hall measurements. Deuterium profiles determined with the SIMS method reveal that the diffusion velocity is strongly linked with the interstitial oxygen concentration present in the different materials. Taking into account these results, a confirmed record high efficiency of 12.5% on Bayer RGS silicon (4 cm²) was achieved with an optimized hydrogen passivation step.

Subject (DDC)

530 Physics

Conference

28th IEEE Photovoltaic Specialists Conference (PVSC), Sep 15, 2000 - Sep 22, 2000, Anchorage

Cite This

ISO 690

HAHN, Giso, Patric GEIGER, Peter FATH, Ernst BUCHER, 2000. Hydrogen passivation of ribbon silicon-electronic properties and solar cell results. 28th IEEE Photovoltaic Specialists Conference (PVSC). Anchorage, Sep 15, 2000 - Sep 22, 2000. In: IEEE, , ed.. Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000. Piscataway, NJ:IEEE Operations Center, pp. 95-98. ISSN 0160-8371. ISBN 0-7803-5772-8. Available under: doi: 10.1109/PVSC.2000.915762

BibTex

@inproceedings{Hahn2000Hydro-30890,
  year={2000},
  doi={10.1109/PVSC.2000.915762},
  title={Hydrogen passivation of ribbon silicon-electronic properties and solar cell results},
  isbn={0-7803-5772-8},
  issn={0160-8371},
  publisher={IEEE Operations Center},
  address={Piscataway, NJ},
  booktitle={Conference record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 : Anchorage Hilton Hotel, Anchorage, AK, 15 -22 September 2000},
  pages={95--98},
  editor={IEEE},
  author={Hahn, Giso and Geiger, Patric and Fath, Peter and Bucher, Ernst}
}

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