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N-type multicrystalline silicon solar cells with BBr<sub>3</sub>-diffused front junction

N-type multicrystalline silicon solar cells with BBr3-diffused front junction

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Prüfsumme: MD5:4a60fc9e330679ef39627d20095da083

LIBAL, Joris, Roman PETRES, Radovan KOPECEK, Giso HAHN, Karsten WAMBACH, Peter FATH, 2005. N-type multicrystalline silicon solar cells with BBr3-diffused front junction. IEEE Photovoltaic Specialists Conference ; 31. Lake Buena Vista, FL, 3. Jan 2005 - 7. Jan 2005. In: Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ:IEEE Operations Center, pp. 1209-1212. ISSN 0160-8371. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488356

@inproceedings{Libal2005Ntype-30883, title={N-type multicrystalline silicon solar cells with BBr3-diffused front junction}, year={2005}, doi={10.1109/PVSC.2005.1488356}, isbn={0-7803-8707-4}, issn={0160-8371}, address={Piscataway, NJ}, publisher={IEEE Operations Center}, booktitle={Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005}, pages={1209--1212}, author={Libal, Joris and Petres, Roman and Kopecek, Radovan and Hahn, Giso and Wambach, Karsten and Fath, Peter} }

Hahn, Giso Kopecek, Radovan 2015-05-05T13:46:04Z terms-of-use Libal, Joris Hahn, Giso Libal, Joris eng N-type multicrystalline silicon solar cells with BBr<sub>3</sub>-diffused front junction A simplified laboratory process with one photolithographic step for front junction solar cells on n-type multicrystalline (mc) silicon has been developed. The emitter diffusion is done in an open tube furnace with BBr3 and back-surface-field diffusion using POCl3, loading the wafers front-to-front and back-to-back respectively and thus avoiding additional etching steps. The front surface has been passivated by a 10 nm thermal oxide grown in a tube furnace. With this simple process, efficiencies of 11.0% on n-type mc-Si and 11.5% on n-type Cz-Si have been realized without antireflection coating and without surface texture. Applying a double layer antireflection coating (DARC) on these cells, efficiencies of 16.4% on Cz-Si and 14.7% on mc-Si have been achieved. Wambach, Karsten Kopecek, Radovan Petres, Roman Fath, Peter 2005 Fath, Peter Wambach, Karsten 2015-05-05T13:46:04Z Petres, Roman

Dateiabrufe seit 05.05.2015 (Informationen über die Zugriffsstatistik)

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