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Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO

Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO

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Prüfsumme: MD5:3658aa4fd2b947259de48714a0a87fdb

ENGELHARDT, Josh, Alexander FREY, Lisa MAHLSTAEDT, Sebastian GLOGER, Giso HAHN, Barbara TERHEIDEN, 2014. Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO. In: Energy Procedia. 55, pp. 235-240. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.050

@article{Engelhardt2014Boron-30557, title={Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO}, year={2014}, doi={10.1016/j.egypro.2014.08.050}, volume={55}, journal={Energy Procedia}, pages={235--240}, author={Engelhardt, Josh and Frey, Alexander and Mahlstaedt, Lisa and Gloger, Sebastian and Hahn, Giso and Terheiden, Barbara} }

2014 Boron emitters from doped PECVD layers for n-type crystalline silicon solar cells with LCO Gloger, Sebastian Engelhardt, Josh Engelhardt, Josh Hahn, Giso Gloger, Sebastian Terheiden, Barbara Mahlstaedt, Lisa 2015-03-25T15:21:20Z 2015-03-25T15:21:20Z Hahn, Giso The intensified research into n-type silicon solar cells over the last few years let the application of boron doped emitters in suitable cell concepts become the preferred method to form the necessary p-n-junction. In this study an alternative process to fabricate a boron doped emitter via diffusion from a PECV-deposited doping source is presented and optimized for n-type crystalline silicon solar cell concepts. Doping profiles with a high surface concentration in combination with low emitter saturation current density values are achieved for improved contact and passivation characteristics. The boron emitter profile is compatible with various contacting techniques i.e. screen printing and vapour deposited Al, allowing for low-resistant contacting with Ag/Al pastes or sputtered Al. The comparably low emitter saturation current density j0E of 44 fA/cm<sup>2</sup> allows for a VOC of 666 mV, and thereby a cell efficiency of 19.7% is demonstrated on a large area (156.25 cm<sup>2</sup>) solar cell. Frey, Alexander eng Mahlstaedt, Lisa Frey, Alexander Terheiden, Barbara

Dateiabrufe seit 25.03.2015 (Informationen über die Zugriffsstatistik)

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