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Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon

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FENNING, David P., Annika S. ZUSCHLAG, Jasmin HOFSTETTER, Alexander FREY, Mariana I. BERTONI, Giso HAHN, Tonio BUONASSISI, 2014. Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon. In: IEEE Journal of Photovoltaics. 4(3), pp. 866-873. eISSN 2156-3381. Available under: doi: 10.1109/JPHOTOV.2014.2312485

@article{Fenning2014Inves-29791, title={Investigation of Lifetime-Limiting Defects After High-Temperature Phosphorus Diffusion in High-Iron-Content Multicrystalline Silicon}, year={2014}, doi={10.1109/JPHOTOV.2014.2312485}, number={3}, volume={4}, journal={IEEE Journal of Photovoltaics}, pages={866--873}, author={Fenning, David P. and Zuschlag, Annika S. and Hofstetter, Jasmin and Frey, Alexander and Bertoni, Mariana I. and Hahn, Giso and Buonassisi, Tonio} }

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Dateiabrufe seit 05.02.2015 (Informationen über die Zugriffsstatistik)

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