Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface


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JOOS, Sebastian, Yvonne SCHIELE, Barbara TERHEIDEN, Hans-Werner BECKER, Detlef ROGALLA, Giso HAHN, 2014. Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface. In: Energy Procedia. 55, pp. 786-790. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2014.08.060

@article{Joos2014Funda-29275, title={Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface}, year={2014}, doi={10.1016/j.egypro.2014.08.060}, volume={55}, journal={Energy Procedia}, pages={786--790}, author={Joos, Sebastian and Schiele, Yvonne and Terheiden, Barbara and Becker, Hans-Werner and Rogalla, Detlef and Hahn, Giso} }

terms-of-use Hahn, Giso eng Rogalla, Detlef Joos, Sebastian Joos, Sebastian Terheiden, Barbara 2014 Becker, Hans-Werner Terheiden, Barbara 2014-11-21T14:22:03Z Schiele, Yvonne Schiele, Yvonne Becker, Hans-Werner Rogalla, Detlef The quality of the interface between silicon and a dielectric is one of the main influencing parameters for crystalline silicon surface passivation. In this work, this interface is examined by means of capacitance voltage (CV) and nuclear resonance reaction analysis (NRRA) measurements for SiN<sub>x</sub>:H as well as SiO<sub>2</sub> capped SiN<sub>x</sub>:H passivated p-type float zone silicon samples. Due to a highly sensitive NRRA measurement setup, very small differences in hydrogen concentration at the interface could be detected for the first time and a significant correlation between hydrogen concentration, interface state trap densities D<sub>it</sub> and passivation quality is found. The results of this study present easily implementable processes to improve the quality of SiN<sub>x</sub>:H surface passivation and process stability for solar cell and module production applications. First optimised industrial type Al-BSF p-type cells feature 2 mV and 0.5 mA/cm² gains in V<sub>oc</sub> and j<sub>sc</sub>, leading to efficiencies of up to 19.1%. Hahn, Giso 2014-11-21T14:22:03Z Fundamental Studies of Hydrogen at the Silicon / Silicon Nitride Interface

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