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Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga<sub>1−x</sub>Mn<sub>x</sub> As alloys

Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnx As alloys

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MICHEL, Christoph, Sergei BARANOVSKII, Peter THOMAS, Wolfram HEIMBRODT, Matthias T. ELM, Peter J. KLAR, Bastian GOLDLÜCKE, Ulrich WURSTBAUER, Matthias REINWALD, Werner WEGSCHEIDER, 2007. Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnx As alloys. In: Journal of Applied Physics. 102(7), 073712. ISSN 0021-8979. eISSN 1089-7550

@article{Michel2007Quant-29127, title={Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1−xMnx As alloys}, year={2007}, doi={10.1063/1.2786556}, number={7}, volume={102}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Michel, Christoph and Baranovskii, Sergei and Thomas, Peter and Heimbrodt, Wolfram and Elm, Matthias T. and Klar, Peter J. and Goldlücke, Bastian and Wurstbauer, Ulrich and Reinwald, Matthias and Wegscheider, Werner}, note={Article Number: 073712} }

Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga<sub>1−x</sub>Mn<sub>x</sub> As alloys Baranovskii, Sergei 2007 Michel, Christoph Baranovskii, Sergei Wurstbauer, Ulrich 2014-10-16T11:00:09Z Thomas, Peter Heimbrodt, Wolfram Goldlücke, Bastian Elm, Matthias T. Reinwald, Matthias Wegscheider, Werner Wurstbauer, Ulrich Wegscheider, Werner Michel, Christoph 2014-10-16T11:00:09Z Thomas, Peter eng We study the changes of magnetoresistance induced by controlled thermal annealing at temperatures ranging from 300to600°C of a Ga<sub>0.98</sub>Mn<sub>0.02</sub>As alloy grown by low-temperature molecular beam epitaxy. We use a resistor-networkmodel for describing the electrical transport as a function of temperature and external magnetic field. The model is founded on classical semiconductor band transport and neglects many-body interactions. The peculiarities of dilute magnetic semiconductors, in particular, the magnetic-field induced changes of the density of states and the potential fluctuations due to the giant Zeeman splitting in the paramagnetic phase as well as spontaneous magnetization effects in the ferromagnetic phase, are accounted for in a mean-field fashion. This empirical transport model based on reasonable assumptions and realistic material parameters yields a satisfactory quantitative description of the experimentally obtained temperature and magnetic-field dependence of the resistivity of the entire series of annealedGa<sub>0.98</sub>Mn<sub>0.02</sub>As samples, which exhibit metallic, semiconducting, and almost insulating transport behavior with increasing annealingtemperature. Our analysis provides further understanding of the annealing-induced changes of the transport properties in dilute magnetic III-Mn-V semiconductors. Goldlücke, Bastian Elm, Matthias T. Reinwald, Matthias Heimbrodt, Wolfram Klar, Peter J. Klar, Peter J.

Dateiabrufe seit 16.10.2014 (Informationen über die Zugriffsstatistik)

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