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Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga<sub>1-x</sub>Mn<sub>x</sub>As alloys

Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1-xMnxAs alloys

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MICHEL, Christoph, Matthias T. ELM, Sergei D. BARANOVSKII, Peter THOMAS, Wolfram HEIMBRODT, Bastian GOLDLÜCKE, Peter J. KLAR, 2008. Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1-xMnxAs alloys. In: Physica Status Solidi (C). 5(3), pp. 819-823. ISSN 1610-1634. eISSN 1610-1642. Available under: doi: 10.1002/pssc.200777573

@article{Michel2008Influ-29124, title={Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga1-xMnxAs alloys}, year={2008}, doi={10.1002/pssc.200777573}, number={3}, volume={5}, issn={1610-1634}, journal={Physica Status Solidi (C)}, pages={819--823}, author={Michel, Christoph and Elm, Matthias T. and Baranovskii, Sergei D. and Thomas, Peter and Heimbrodt, Wolfram and Goldlücke, Bastian and Klar, Peter J.} }

Thomas, Peter We study theoretically the influence of a spatially nonrandom incorporation of Mn ions on the magnetotransport in paramagnetic Ga<sub>1–x</sub>Mn<sub>x</sub>As alloys. Such a nonrandomness may be introduced during post-growth annealing treatment. We use a resistor-network model for describing the electrical transport of this disordered semiconductor system as a function of temperature and external magnetic field. The model is founded on classical semiconductor band-transport and neglects many-body interactions. The peculiarities of paramagnetic dilute magnetic semiconductors, in particular, the magnetic-field induced changes of the density of states, the broad acceptor-energy distribution, and the interplay of magnetic field independent disorder (due to the alloying of GaAs with Mn) and magnetic field dependent disorder (due to the the Giant Zeeman splitting) are accounted for in a mean-field fashion. We have previously shown that this empirical transport model based on reasonable assumptions and realistic material parameters yields a satisfactory quantitative description of the experimentally obtained temperature and magnetic-field dependence of the resistivity of Ga<sub>0.98</sub>Mn<sub>0.02</sub>As samples annealed at different temperatures. For Ga<sub>1–x</sub>Mn<sub>x</sub>As alloys annealed at temperatures above 500 °C where structural changes lead to the formation of MnAs clusters, the transport is dominated by the paramagnetic GaAs:Mn host matrix as the cluster density is below the percolation threshold. We will show that in this situation the transport results can only be explained accounting for a nonrandom Mn distribution. Thus the analysis shown here provides further understanding of the annealing-induced changes of the transport properties in dilute magnetic III-Mn-V semiconductors. Michel, Christoph Baranovskii, Sergei D. Baranovskii, Sergei D. Goldlücke, Bastian Heimbrodt, Wolfram Elm, Matthias T. 2014-10-15T09:53:49Z Michel, Christoph Elm, Matthias T. 2014-10-15T09:53:49Z 2008 Goldlücke, Bastian Thomas, Peter Heimbrodt, Wolfram eng Influence of non-random incorporation of Mn ions on the magnetotransport properties of Ga<sub>1-x</sub>Mn<sub>x</sub>As alloys Klar, Peter J. Klar, Peter J.

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