Electrical characterization of electrochemically grown single copper nanowires

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TOIMIL MOLARES, Maria Eugenia, Eva M. HÖHBERGER, Christian SCHAEFLEIN, Robert H. BLICK, R. NEUMANN, C. TRAUTMANN, 2003. Electrical characterization of electrochemically grown single copper nanowires. In: Applied Physics Letters. 82(13), 2139. ISSN 0003-6951. eISSN 1077-3118

@article{Toimil Molares2003Elect-26009, title={Electrical characterization of electrochemically grown single copper nanowires}, year={2003}, doi={10.1063/1.1563741}, number={13}, volume={82}, issn={0003-6951}, journal={Applied Physics Letters}, author={Toimil Molares, Maria Eugenia and Höhberger, Eva M. and Schaeflein, Christian and Blick, Robert H. and Neumann, R. and Trautmann, C.}, note={Article Number: 2139} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/26009"> <dc:creator>Schaeflein, Christian</dc:creator> <dc:creator>Höhberger, Eva M.</dc:creator> <dc:creator>Blick, Robert H.</dc:creator> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103605204-4002607-1"/> <dc:contributor>Schaeflein, Christian</dc:contributor> <dcterms:bibliographicCitation>Applied Physics Letters ; 82 (2013), 13. - 2139</dcterms:bibliographicCitation> <dc:contributor>Blick, Robert H.</dc:contributor> <dc:creator>Neumann, R.</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2014-01-23T10:14:13Z</dcterms:available> <dcterms:issued>2003</dcterms:issued> <dc:creator>Trautmann, C.</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/26009"/> <dc:language>eng</dc:language> <dc:contributor>Toimil Molares, Maria Eugenia</dc:contributor> <dcterms:abstract xml:lang="eng">Single- and poly-crystalline copper wires with diameters down to 30 nm are grown in etched ion-track membranes. Individual nanowires are isolated and contacted by means of optical lithography. Electronic transport properties and oxidation processes are investigated. Depending on the oxidation state, the wire resistance varies between a few hundred ohms and several megaohms, enabling its usage as metallic or semiconducting structural elements for devices on the nanometer scale.</dcterms:abstract> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2014-01-23T10:14:13Z</dc:date> <dc:creator>Toimil Molares, Maria Eugenia</dc:creator> <dc:contributor>Trautmann, C.</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:contributor>Höhberger, Eva M.</dc:contributor> <dcterms:title>Electrical characterization of electrochemically grown single copper nanowires</dcterms:title> <dc:contributor>Neumann, R.</dc:contributor> </rdf:Description> </rdf:RDF>

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